[1] Yao Jiannan**, Li Juntao,. Degradation of the Emission Current from the FieldEmitter Caused by Ion Bombardment* [J]. Journal of Southeast University (English Edition), 2002, 18 (4): 326-330. [doi:10.3969/j.issn.1003-7985.2002.04.008]

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Degradation of the Emission Current from the FieldEmitter Caused by Ion Bombardment^*()

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Journal of Southeast University (English Edition)[ISSN:1003-7985/CN:32-1325/N]

Volumn:

18

Issue:

2002 4

Page:

326-330

Research Field:

Electronic Science and Engineering

Publishing date:

2002-12-30

Info

Title:

Degradation of the Emission Current from the FieldEmitter Caused by Ion Bombardment^*

Author(s):

Yao Jiannan^**;  Li Juntao

Department of Electronic Engineering, Southeast University, Nanjing 210096, China

Keywords:

field emitter;  degradation of the emission current;  ion bombardment

PACS:

TN101

DOI:

10.3969/j.issn.1003-7985.2002.04.008

Abstract:

In field emission devices, the emission current sometimes degrades with the time. The mechanism of the current degradation is complicated. In this paper, a program is used to simulate the movement of the electron beam from a field emitter. According to the current distribution and the trajectories of the primary electron beam, it is shown that the residual gas is ionized and the ion pairs are generated. The trajectories of the positive ions are simulated. With the different locations and kinetic energy of ions, the damage of the emitter surface is analysed and the variation of the profile of the field emitter is obtained. Finally, the degradation of the emission current is predicted with different gas pressures and primary electron beam current.

References:

[1] Reuss Robert H, Chalamala Babu R. New insights into the degradation of field emission display[A].In: Society Information Display International Symposium Digest of Technical Papers[C].USA: Society for information Display, 2001. 81-83.
[2] Chalamala Babu R, Reuss Robert H. Operation of FEAs in hydrogen and development of thin film metal hydrides for integration into FEDs[A]. In: Society Information Display International Symposium Digest of Technical Papers[C].USA: Society for Information Display, 2001.89-91.
[3] Hawkes P W, Kasper E. Principles of electron optics[M]. London: Academic Press, 1996.
[4] Spindt C A, Brodie I, Humphrey L, et al. Physical properties of thin-film field emission cathode with molybdenum cones[J]. J Appl Phys, 1976, 47(2):5248-5263.
[5] Zalm P C. Energy dependence of the sputtering yield of silicon bombardment with neon, argon, krypton, and xenon ions[J]. J Appl Phys, 1983, 54(5):2660-2666.
[6] Wilson W D, Haggmark L G. Calculation of nuclear stopping, ranges, and straggling in the low-energy region[J]. Physical Review B, 1977, 15(5):2458-2468.

Memo

Memo:

* The project supported by the Foundation of National Defense Science and Technology High Power Microwave Electronic Vacuum Device Key Laboratory(51440040101JW0601).
** Born in 1954, male, associate professor.

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