[1] Zhu Yizhi, Zhang Xiaojuan, Fang Guangyou, et al. Novel S-slot DGS with high quality factor [J]. Journal of Southeast University (English Edition), 2009, 25 (4): 431-434. [doi:10.3969/j.issn.1003-7985.2009.04.003]

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Novel S-slot DGS with high quality factor()

新型高品质因数S形缝隙缺陷地结构

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Journal of Southeast University (English Edition)[ISSN:1003-7985/CN:32-1325/N]

Volumn:

25

Issue:

2009 4

Page:

431-434

Research Field:

Electronic Science and Engineering

Publishing date:

2009-12-30

Info

Title:

Novel S-slot DGS with high quality factor

新型高品质因数S形缝隙缺陷地结构

Author(s):

Zhu Yizhi¹;  2;  Zhang Xiaojuan¹;  Fang Guangyou¹

¹Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China
² Graduate University of Chinese Academy of Sciences, Beijing 100049, China

朱轶智¹;  2;  张晓娟¹;  方广有¹

¹中国科学院电子学研究所, 北京 100190; ²中国科学院研究生院, 北京 100049

Keywords:

S-slot;  defected ground structure(DGS);  quality factor

S形缝隙;  缺陷地;  品质因数

PACS:

TN713;TN455

DOI:

10.3969/j.issn.1003-7985.2009.04.003

Abstract:

In order to solve the problem that the quality factor(Q factor)of the conventional defected ground structure(DGS)is not high and cannot produce a sharp resonant band, a novel S-slot DGS is presented. Compared with the conventional DGS, the proposed S-slot DGS has a much higher Q factor, a quite simpler layout and a steeper band rejection. Its equivalent circuit model is extracted by analyzing the transfer characteristics, and design parameters are calculated according to the deducted equations. Characteristics of this type of DGS are investigated with variable dimension parameters and an experiential method for the design of the S-slot DGS is summarized. Finally, a sample of a compact S-slot DGS unit resonated at 4.64 GHz is fabricated. Its Q factor is as high as 39.66 and its size is only 5.00 mm×1.40 mm, with a steep resonant band and a low insertion-loss passband. The measured results show a good agreement with simulation, which demonstrates the applicability of the S-slot DGS in practical engineering.

针对传统的缺陷地结构品质因数低、不足以产生尖锐的谐振特性问题, 提出了一种新颖的S形缝隙缺陷地结构.与传统的缺陷地结构相比, 该结构具有更高的品质因数、相对更简单而紧凑的布局和更陡峭的阻带特性. 通过分析其传输特性提取了该结构的等效电路模型, 推导了其结构参数的设计方程, 研究了该结构的传输特性随结构参数变化的规律, 并总结了设计该S形缝隙缺陷地结构的经验方法. 根据此方法设计加工了一个中心频率为4.64 GHz的S形缝隙缺陷地结构样品, 其品质因数高达39.66, 尺寸大小仅为5.00 mm×1.40 mm, 谐振带陡峭而通带插入损耗小, 测量结果和仿真结果相吻合, 从而验证了该S形缝隙缺陷地在实际工程上的适用性.

References:

[1] Park J I, Kim C S, Kim J, et al. Modeling of a photonic bandgap and its application for the low-pass filter design [C]//Proceedings of Asia-Pacific Microwave Conference’99. Singapore, 1999: 331-334.
[2] Kim H-M, Lee B. Bandgap and slow/fast-wave characteristics of defected ground structures(DGSs)including left-handed features [J]. IEEE Transactions on Microwave Theory and Techniques, 2006, 54(7): 3113-3120.
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Memo

Memo:

Biographies: Zhu Yizhi(1981—), male, graduate; Zhang Xiaojuan(corresponding author), female, doctor, professor, xjzhang@mail.ie.ac.cn.
Foundation items: The National Natural Science Foundation of China(No.60890071), the National High Technology Research and Development Program of China(863 Program)(No.2009AA01Z132).
Citation: Zhu Yizhi, Zhang Xiaojuan, Fang Guangyou. Novel S-slot DGS with high quality factor[J]. Journal of Southeast University(English Edition), 2009, 25(4): 431-434.

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