[1] Li Sheng, Xu Zhiyuan, Wei Jiaxing, Liu Siyang, et al. Investigation of radiation influenceson electrical parameters of 4H-SiC VDMOS [J]. Journal of Southeast University (English Edition), 2018, 34 (4): 474-479. [doi:10.3969/j.issn.1003-7985.2018.04.009]

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Investigation of radiation influenceson electrical parameters of 4H-SiC VDMOS()

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Journal of Southeast University (English Edition)[ISSN:1003-7985/CN:32-1325/N]

Volumn:

34

Issue:

2018 4

Page:

474-479

Research Field:

Electrical Engineering

Publishing date:

2018-12-20

Info

Title:

Investigation of radiation influenceson electrical parameters of 4H-SiC VDMOS

Author(s):

Li Sheng;  Xu Zhiyuan;  Wei Jiaxing;  Liu Siyang;  Sun Weifeng

National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China

Keywords:

4H-SiC VDMOS;  radiation;  trap;  interface charge;  electrical parameters

PACS:

TM23

DOI:

10.3969/j.issn.1003-7985.2018.04.009

Abstract:

The radiation influences on electrical parameters of 4H-SiC vertical double-implanted metal-oxide-semiconductor field effect transistor(VDMOS)are studied. By simulations on SRIM software and SILVACO software, the electrical parameters shifts of the device with defects in different regions are observed. The results indicate that the defects in different regions induced by radiations lead to different degradations of the electrical parameters. Non-ionization bulk defects in the JFET region make the drain-source on-state resistance R_dson increase, and those near the impact ionization center make the breakdown voltage V_breakdown increase. Moreover, the radiation-induced SiC/SiO₂ interface defects, known as negative interface charges or positive interface charges, influence the electrical parameters significantly as well. The positive interface charges along the SiC/SiO₂ interface above the channel region lead to a decrease in threshold voltage V_th, R_dson and V_breakdown, while positive interface charges along the SiC/Metal interface above the main junction of the terminal only leads to the decrease in V_breakdown. The negative interface charges along the SiC/SiO₂ interface above the channel region can make V_th, R_dson and V_breakdown increase.

References:

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Memo

Memo:

Biographies: Li Sheng(1993—), male, Ph.D. candidate; Sun Wei-feng(corresponding author), male, doctor, professor, swffrog@seu.edu.cn.
Foundation items: The Foundation of State Key Laboratory of Wide-bandgap Semiconductor Power Electronics Devices(No.2017KF003), the Fundamental Research Funds for the Central Universities.
Citation: Li Sheng, Xu Zhiyuan, Wei Jiaxing, et al. Investigation of radiation influences on electrical parameters of 4H-SiC VDMOS[J].Journal of Southeast University(English Edition), 2018, 34(4):474-479.DOI:10.3969/j.issn.1003-7985.2018.04.009.

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