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[1] Li Sheng, Xu Zhiyuan, Wei Jiaxing, Liu Siyang, et al. Investigation of radiation influenceson electrical parameters of 4H-SiC VDMOS [J]. Journal of Southeast University (English Edition), 2018, 34 (4): 474-479. [doi:10.3969/j.issn.1003-7985.2018.04.009]
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Investigation of radiation influenceson electrical parameters of 4H-SiC VDMOS()
辐照对4H-SiC VDMOS电学参数的影响
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Journal of Southeast University (English Edition)[ISSN:1003-7985/CN:32-1325/N]

Volumn:
34
Issue:
2018 4
Page:
474-479
Research Field:
Electrical Engineering
Publishing date:
2018-12-20

Info

Title:
Investigation of radiation influenceson electrical parameters of 4H-SiC VDMOS
辐照对4H-SiC VDMOS电学参数的影响
Author(s):
Li Sheng;  Xu Zhiyuan;  Wei Jiaxing;  Liu Siyang;  Sun Weifeng
National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China
李胜;  徐志远;  魏家行;  刘斯扬;  孙伟锋
东南大学国家专用集成电路系统工程技术研究中心, 南京 210096
Keywords:
4H-SiC VDMOS;  radiation;  trap;  interface charge;  electrical parameters
4H-SiC VDMOS;  辐照;  陷阱;  界面电荷;  电学参数
PACS:
TM23
DOI:
10.3969/j.issn.1003-7985.2018.04.009
Abstract:
The radiation influences on electrical parameters of 4H-SiC vertical double-implanted metal-oxide-semiconductor field effect transistor(VDMOS)are studied. By simulations on SRIM software and SILVACO software, the electrical parameters shifts of the device with defects in different regions are observed. The results indicate that the defects in different regions induced by radiations lead to different degradations of the electrical parameters. Non-ionization bulk defects in the JFET region make the drain-source on-state resistance Rdson increase, and those near the impact ionization center make the breakdown voltage Vbreakdown increase. Moreover, the radiation-induced SiC/SiO2 interface defects, known as negative interface charges or positive interface charges, influence the electrical parameters significantly as well. The positive interface charges along the SiC/SiO2 interface above the channel region lead to a decrease in threshold voltage Vth, Rdson and Vbreakdown, while positive interface charges along the SiC/Metal interface above the main junction of the terminal only leads to the decrease in Vbreakdown. The negative interface charges along the SiC/SiO2 interface above the channel region can make Vth, Rdson and Vbreakdown increase.
研究了辐照对4H-SiC纵向双注入金属氧化物场效应晶体管(VDMOS)电学参数的影响.通过SRIM和SILVACO软件仿真, 观察到器件不同区域引入损伤后电学参数的漂移.仿真结果表明, 不同区域的损伤会造成器件电学参数不同的退化.器件JFET区的非电离损伤会使器件的导通电阻增大, 而靠近碰撞电离中心的非电离损伤会使器件的击穿电压增大.辐照在器件界面处引入的正电荷或负电荷同样会对器件的电学参数带来很大的影响.沟道上方SiC/SiO2 界面处的正电荷会导致器件的阈值电压、导通电阻以及击穿电压降低, 而终端区主结上方的SiC/Metal界面处的正电荷只会导致击穿电压的降低.相反, 沟道上方SiC/SiO2 界面处的负电荷会导致器件的阈值电压、导通电阻以及击穿电压增加.

References:

[1] Funaki T, Sasagawa M, Nakamura T. Multi-chip SiC DMOSFET half-bridge power module for high temperature operation [C]//IEEE Applied Power Electronics Conference and Exposition. Orlando, FL, USA, 2012:2525-2529.
[2] Liu S Y, Yang C, Sun W F, et al. Repetitive-avalanche-induced electrical parameters shift for 4H-SiC junction barrier schottky diode[J]. IEEE Transactions on Electron Devices, 2015, 62(2): 601-605. DOI:10.1109/ted.2014.2375821.
[3] Wei J X, Liu S Y, Ye R, et al. Interfacial damage extraction method for SiC power MOSFETs based on C-V characteristics [C]//International Symposium on Power Semiconductor Devices and IC’s. Sapporo, Japan, 2017:359-362.
[4] Sato S, Hiroi Y, Yamabe K, et al. Effect of series resistance on dielectric breakdown phenomenon of silicon carbide MOS capacitor [C]//IEEE Physical and Failure Analysis of Integrated Circuits. Hsinchu, China, 2015:72-75.
[5] Chen H, Pashaei V, Liao W, et al. Energetic ion radiation effects on a silicon carbide(SiC)multimode resonating diaphragm [C]//International Conference on Solid-State Sensors, Actuators and Microsystems. Kaohsiung, China, 2017:990-993.
[6] Storasta L, Bergman J P, Janzén E, et al. Deep levels created by low energy electron irradiation in 4H-SiC[J]. Journal of Applied Physics, 2004, 96(9): 4909-4915. DOI:10.1063/1.1778819.
[7] Sharma R K, Hazdra P, Popelka S. The effect of light ion irradiation on 4H-SiC MPS power diode characteristics: Experiment and simulation[J]. IEEE Transactions on Nuclear Science, 2015, 62(2): 534-541. DOI:10.1109/tns.2015.2395712.
[8] Luo Z Y, Chen T B, Ahyi A C, et al. Proton radiation effects in 4H-SiC diodes and MOS capacitors[J]. IEEE Transactions on Nuclear Science, 2004, 51(6): 3748-3752. DOI:10.1109/tns.2004.839254.
[9] Luo Z Y, Chen T B, Cressler J D, et al. Impact of proton irradiation on the static and dynamic characteristics of high-voltage 4H-SiC JBS switching diodes[J]. IEEE Transactions on Nuclear Science, 2003, 50(6): 1821-1826. DOI:10.1109/tns.2003.821806.
[10] Waskiewicz R J, Anders M A, Lenahan P M, et al. Ionizing radiation effects in 4H-SiC nMOSFETs studied with electrically detected magnetic resonance[J]. IEEE Transactions on Nuclear Science, 2017, 64(1): 197-203. DOI:10.1109/tns.2016.2622159.
[11] Yang T T, Bai S, Huang R H. Optimization of junction termination extension for ultrahigh voltage 4H-SiC planar power devices[J]. Journal of Semiconductors, 2017, 38(4):044004. DOI:10.1088/1674-4926/38/4/044004.
[12] Castaldini A, Cavallini A, Rigutti L, et al. Deep levels by proton and electron irradiation in 4H-SiC[J]. Journal of Applied Physics, 2005, 98(5): 053706. DOI:10.1063/1.2014941.
[13] Ziegler J F. SRIM—Lessons and tutorials [EB/OL].(2013)[2017-12-10]. http://www.srim.org/SRIM/Tutorials/Tutorials.htm.
[14] Rao M H L, Murty N V L N. An improved analytical model of 4H-SiC MESFET incorporating bulk and interface trapping effects [J]. Journal of Semiconductors, 2015, 36(1):64-75.

Memo

Memo:
Biographies: Li Sheng(1993—), male, Ph.D. candidate; Sun Wei-feng(corresponding author), male, doctor, professor, swffrog@seu.edu.cn.
Foundation items: The Foundation of State Key Laboratory of Wide-bandgap Semiconductor Power Electronics Devices(No.2017KF003), the Fundamental Research Funds for the Central Universities.
Citation: Li Sheng, Xu Zhiyuan, Wei Jiaxing, et al. Investigation of radiation influences on electrical parameters of 4H-SiC VDMOS[J].Journal of Southeast University(English Edition), 2018, 34(4):474-479.DOI:10.3969/j.issn.1003-7985.2018.04.009.
Last Update: 2018-12-20