|Table of Contents|

[1] Li Haixia, Ji Aiming, Zhu Canyan, et al. Influence of the finite size effect of Si(001)/SiO2 interfaceon the gate leakage current in nano-scale transistors [J]. Journal of Southeast University (English Edition), 2019, 35 (3): 341-350. [doi:10.3969/j.issn.1003-7985.2019.03.010]
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Influence of the finite size effect of Si(001)/SiO2 interfaceon the gate leakage current in nano-scale transistors()
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Journal of Southeast University (English Edition)[ISSN:1003-7985/CN:32-1325/N]

Volumn:
35
Issue:
2019 3
Page:
341-350
Research Field:
Electronic Science and Engineering
Publishing date:
2019-09-30

Info

Title:
Influence of the finite size effect of Si(001)/SiO2 interfaceon the gate leakage current in nano-scale transistors
Author(s):
Li Haixia1 2 Ji Aiming1 Zhu Canyan1 Mao Lingfeng3
1School of Rail Transportation, Soochow University, Suzhou 215006, China
2School of Information Engineering, Suqian College, Suqian 223800, China
3School of Computer & Communication Engineering, University of Science & Technology Beijing, Beijing 100083, China
Keywords:
finite size effect tunneling current nano-scale transistor
PACS:
TN32
DOI:
10.3969/j.issn.1003-7985.2019.03.010
Abstract:
With the device size gradually approaching the physical limit, the small changes of the Si(001)/SiO2 interface in silicon-based devices may have a great impact on the device characteristics. Based on this, the bridge-oxygen model is used to construct the interface of different sizes, and the finite size effect of the interface between fine electronic structure silicon and silicon dioxide is studied. Then, the influence of the finite size effect on the electrical properties of nanotransistors is calculated by using the first principle. Theoretical calculation results demonstrate that the bond length of Si-Si and Si-O shows a saturate tendency when the size increases, while the absorption capacity of visible light and the barrier of the interface increase with the decrease of size. Finally, the results of two tunneling current models show that the finite size effect of Si(001)/SiO2 interface can lead to a larger change in the gate leakage current of nano-scale devices, and the transition region and image potential, which play an important role in the calculation of interface characteristics of large-scale devices, show different sensitivities to the finite size effect. Therefore, the finite size effect of the interface on the gate leakage current cannot be ignored in nano-scale devices.

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Memo

Memo:
Biographies: Li Haixia(1983—), female, master; Mao Lingfeng(corresponding author), male, doctor, professor, mail_lingfeng@aliyun.com.
Foundation items: The National Natural Science Foundation of China(No. 61774014), Postgraduate Research & Practice Innovation Program of Jiangsu Province(No. KYZZ15_0331), the Natural Science Foundation of the Jiangsu Higher Education Institutions of China(No.19KJB510060).
Citation: Li Haixia, Ji Aiming, Zhu Canyan, et al.Influence of the finite size effect of Si(001)/SiO2 interface on the gate leakage current in nano-scale transistors[J].Journal of Southeast University(English Edition), 2019, 35(3):341-350.DOI:10.3969/j.issn.1003-7985.2019.03.010.
Last Update: 2019-09-20