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[1] Xu Jian, Wang ZhigongZhang Ying, Tian Mi,. Distributed amplifier of L-type networkwith 2-μm GaAs HBT process [J]. Journal of Southeast University (English Edition), 2011, 27 (1): 13-16. [doi:10.3969/j.issn.1003-7985.2011.01.003]
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Distributed amplifier of L-type networkwith 2-μm GaAs HBT process()
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Journal of Southeast University (English Edition)[ISSN:1003-7985/CN:32-1325/N]

Volumn:
27
Issue:
2011 1
Page:
13-16
Research Field:
Circuit and System
Publishing date:
2011-03-30

Info

Title:
Distributed amplifier of L-type networkwith 2-μm GaAs HBT process
Author(s):
Xu Jian;  Wang ZhigongZhang Ying;  Tian Mi
Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China
Keywords:
distribution amplifier;  L-type network;  GaAs HBT process;  ultra-high broadband
PACS:
TN43
DOI:
10.3969/j.issn.1003-7985.2011.01.003
Abstract:
The characteristic impedances of L-type and T-type networks are first investigated for a distributed amplifier design. The analysis shows that the L-type network has better frequency characteristics than the T-type one. A distribution amplifier based on the L-type network is implemented with the 2-μm GaAs HBT(heterojunction-bipolar transistor)process of WIN semiconductors. The measurement result presents excellent bandwidth performance and gives a gain of 5.5 dB with a gain flatness of ±1dB over a frequency range from 3 to 18 GHz. The return losses S11 and S22 are below-10dB in the designed frequency range. The output 1-dB compression point at 5 GHz is 13.3 dBm. The chip area is 0.95 mm2 and the power dissipation is 95 mW under a 3.5 V supply.

References:

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[3] Baeyens Y, Weimann N, Houtsma V, et al. Submicron InP D-HBT single-stage distributed amplifier with 17 dB gain and over 110 GHz bandwidth[C]//IEEE MTT-S International Microwave Symposium Digest. San Francisco, CA, USA, 2006: 818-821.
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[5] Meliani C, Rudolph M, Doerner R, et al. Bandwidth potential of cascode HBT-Based TWAs as a function of transistor ratio[J]. IEEE Transactions on Microwave Theory and Techniques, 2009, 56(6): 1331-1337.
[6] Sewiolo B, Fischer G, Weigel R. A 12-GHz high-efficiency tapered traveling-wave power amplifier with novel power matched cascode gain cells using SiGe HBT transistors[J]. IEEE Transactions on Microwave Theory and Techniques, 2009, 57(10): 2329-2336.
[7] Xu Jian, Wang Zhigong, Zhang Ying. Design of distributed amplifier with L-type networks[C]//IEEE International Conference on Ultra-Wideband. Wuhan, China, 2010:489-491.

Memo

Memo:
Biographies: Xu Jian(1972—), male, doctor, xujian318@seu.edu.cn;Wang Zhigong(1954—), male, professor, zgwang@seu.edu.cn.
Foundation items: China Postdoctoral Science Foundation(No.20090461048), Postdoctoral Science Foundation of Jiangsu Province(No.0901022C), Postdoctoral Science Foundation of Southeast University.
Citation: Xu Jian, Wang Zhigong, Zhang Ying, et al. Distributed amplifier of L-type network with 2-μm GaAs HBT process[J].Journal of Southeast University(English Edition), 2011, 27(1):13-16.[doi:10.3969/j.issn.1003-7985.2011.01.003]
Last Update: 2011-03-20