[1] Ji Lianqing, Xu Zhiming, Zhou Jianyi, Zhai Jianfeng, et al. Highly efficient class-F power amplifierwith digital predistortion for WCDMA applications [J]. Journal of Southeast University (English Edition), 2013, 29 (2): 125-128. [doi:10.3969/j.issn.1003-7985.2013.02.003]

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Highly efficient class-F power amplifierwith digital predistortion for WCDMA applications()

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Journal of Southeast University (English Edition)[ISSN:1003-7985/CN:32-1325/N]

Volumn:

29

Issue:

2013 2

Page:

125-128

Research Field:

Electronic Science and Engineering

Publishing date:

2013-06-20

Info

Title:

Highly efficient class-F power amplifierwith digital predistortion for WCDMA applications

Author(s):

Ji Lianqing;  Xu Zhiming;  Zhou Jianyi;  Zhai Jianfeng

State Key Laboratory of Millimeter Waves, Southeast University, Nanjing 210096, China

Keywords:

digital predistortion;  peak power-added efficiency;  drain efficiency;  adjacent channel power ratio;  efficiency;  linearity;  class-F power amplifier

PACS:

TN722

DOI:

10.3969/j.issn.1003-7985.2013.02.003

Abstract:

A digital predistorted class-F power amplifier(PA)using Cree GaN HEMT CGH40010 operating at 2.12 GHz is presented to obtain high efficiency and excellent linearity for wideband code-division multiple access(WCDMA)applications. Measurement results with the continuous wave(CW)signals indicate that the designed class-F PA achieves a peak power-added efficiency(PAE)of 75.2% with an output power of 39.4 dBm. The adjacent channel power ratio(ACPR)of the designed PA after digital predistortion(DPD)decreases from -28.3 and -27.5 dBc to -51.9 and -54.0 dBc, respectively, for a 4-carrier 20 MHz WCDMA signal with 7.1 dB peak to average power ratio(PAPR). The drain efficiency(DE)of the PA is 37.8% at an average output power of 33.3 dBm. The designed power amplifier can be applied in the WCDMA system.

References:

[1] Cripps S C. RF power amplifiers for wireless communications [M]. Norwood, MA, USA: Artech House, 2006.
[2] Raab F H, Asbeck P, Cripps S, et al. Power amplifiers and transmitters for RF and microwave [J]. IEEE Transactions on Microwave Theory and Techniques, 2002, 50(3):814-826.
[3] Schmelzer D, Long S I. A GaN HEMT class F amplifier at 2 GHz with>80% PAE [J]. IEEE Journal of Solid-State Circuits, 2007, 42(10):2130-2136.
[4] Ui N, Sano S. A 45% drain efficiency, -50dBc ACLR GaN HEMT class-E amplifier with DPD for W-CDMA base station [C]//IEEE MTT-S International Microwave Symposium Digest. San Francisco, CA, USA, 2006:718-721.
[5] Wang Jingqi, Xu Yingjie, Zhu Xiaowei. Digital predistorted inverse class-F GaN PA with novel PAPR reduction technique [C]//IEEE MTT-S International Microwave Symposium Digest. Baltimore, MD, USA, 2011:5972781-1-5972781-4.
[6] Schetzen M. The Volterra and Wiener theories of nonlinear systems [M]. Melbourne, FL, USA: Krieger Publishing Company, 1989.
[7] Hyunchul K, Kenney J S. Behavioral modeling of nonlinear RF power amplifiers considering memory effects [J]. IEEE Transactions on Microwave Theory and Techniques, 2003, 51(12):2495-2504.
[8] Ding L, Zhou G T, Morgan D R, et al. A robust digital baseband predistorter constructed using memory polynomials [J]. IEEE Transactions on Communications, 2004, 52(1):159-165.
[9] Morgan D R, Ma Zhengxiang, Kim J, et al. A generalized memory polynomial model for digital predistortion of RF power amplifiers [J]. IEEE Transactions on Signal Processing, 2006, 54(10):3852-3860.
[10] Zhu A, Pedro J C, Brazil T J. Dynamic deviation reduction-based Volterra behavioral modeling of RF power amplifiers [J]. IEEE Transactions on Microwave Theory and Techniques, 2006, 54(12):4323-4332.
[11] Zhu A, Draxler P J, Yan J J, et al. Open-loop digital predistorter for RF power amplifiers using dynamic deviation reduction-based Volterra series [J]. IEEE Transactions on Microwave Theory and Techniques, 2008, 56(7):1524-1534.
[12] Guan L, Zhu A. Simplified dynamic deviation reduction-based Volterra model for Doherty power amplifiers [C]//Integrated Nonlinear Microwave and Millimetre-Wave Circuits. Vienna, Austria, 2011: 5773325-1-5773325-4.
[13] Guan L, Zhu A. Dual-loop model extraction for digital predistortion of wideband RF power amplifiers [J]. IEEE Microwave and Wireless Components Letters, 2011, 21(9):501-503.
[14] Xia J, Zhu X. Highly efficient unsymmetrical Doherty power amplifier with DPD for LTE application [J]. Microwave and Optical Technology Letters, 2012, 54(10):2352-2356.
[15] Wu D Y T, Frebrowski D, Boumaiza S. First-pass design of high efficiency power amplifiers using accurate large signal models [C]//Wireless and Microwave Technology Conference. Melbourne, FL, USA, 2010: 5461832-1-5461832-4.

Memo

Memo:

Biographies: Ji Lianqing(1986—), male, graduate; Zhou Jianyi(corresponding author), male, doctor, professor, jyzhou@seu.edu.cn.
Foundation items: The National Natural Science Foundation of China(No.60702163), the National Science and Technology Major Project(No.2010ZX03007-002-01, 2011ZX03004-003).
Citation: Ji Lianqing, Xu Zhiming, Zhou Jianyi, et al. Highly efficient class-F power amplifier with digital predistortion for WCDMA applications[J].Journal of Southeast University(English Edition), 2013, 29(2):125-128.[doi:10.3969/j.issn.1003-7985.2013.02.003]

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