|Table of Contents|

[1] Zhang Xueyun**, Shi Lin, Zhai Ya, Shi Jing, et al. Ferromagnetic Resonance Study on the Permalloy SubmicronRectangular Arrays Prepared by Electron Beam Lithography* [J]. Journal of Southeast University (English Edition), 2002, 18 (2): 197-200. [doi:10.3969/j.issn.1003-7985.2002.02.020]
Copy

Ferromagnetic Resonance Study on the Permalloy SubmicronRectangular Arrays Prepared by Electron Beam Lithography*()
Share:

Journal of Southeast University (English Edition)[ISSN:1003-7985/CN:32-1325/N]

Volumn:
18
Issue:
2002 2
Page:
197-200
Research Field:
Mathematics, Physics, Mechanics
Publishing date:
2002-06-30

Info

Title:
Ferromagnetic Resonance Study on the Permalloy SubmicronRectangular Arrays Prepared by Electron Beam Lithography*
Author(s):
Zhang Xueyun1** Shi Lin1 Zhai Ya1 Shi Jing2
1Department of Physics, Southeast University, Nanjing 210096, China
2Department of Physics, University of Utah, Salt Lake City, UT 84112, USA
Keywords:
ferromagnetic resonance permalloy film submicron arrays
PACS:
O482.54
DOI:
10.3969/j.issn.1003-7985.2002.02.020
Abstract:
In this paper, we report a ferromagnetic resonance study on the permalloy film of submicron-sized rectangular arrays prepared by electron beam lithography and the theoretical simulation to the non-uniform demagnetizing effect and ferromagnetic resonance data. By theoretical simulation, the magnetization, gyromagnetic ratio and g value of the sample are determined. The theoretical curves of the dependence of the resonance field on the field orientation φH fit well with the experimental data. When the steady magnetic field is applied near the film normal, a series of additional regular peaks(up to eight )appeared in the FMR spectrum on the low field side of the main FMR peak. The resonance field of these side peaks decreases linearly with the peak number. The possible physical mechanism of these multiple peaks was discussed.

References:

[1] Parkin S S P, Roche K P, Samant M G, et al. Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory [J]. Journal of Applied Physics, 1999, 85(8):5828-5833.
[2] Schrefl T, Fidler J. Reversal modes and reversal times in submicron sized elements for MRAM applications [J]. Computatioal Materials Science, 2000, 17(2-4): 490-495.
[3] Shi Jing, Tehrani S, Zhu T, et al. Magnetization vortices and anomalous switching in patterned NiFeCo submicron arrays [J]. Applied Physics Letter, 1999, 74(17): 2525-2527.
[4] Wittborn J, Rao K V, Porksch R, et al. Magnetization reversal observation and manipulation of chains of nanoscale magnetic particles using the magnetic force microscope [J]. Nanostructured Materials, 1999, 12(5-8):1149-1152.
[5] Jorzick J, Krämer C, Demokritov S O, et al. Magneto-dipole coupling in arrays of micron-size rectangular magnetic elements [J]. Journal of Magnetism and Magnetic Materials, 2001, 226(2):1835-1837.
[6] Zhai Y, Xu Y X, Shi J, et al. FMR study on patterned and unpatterned magnetic thin films [J]. Journal of Magnetism and Magnetic Materials, 2001, 226(2):1567-1569.
[7] Platow W, Anisimov A N, Duniter G L, et al. Correlations between ferromagentic-resonance linewidths and sample quality in the study of metallic ultrathin films [J]. Physics Review B, 1998, 58(9):5611-5621.
[8] Zhai Y, Xu Y X, Long J G, et al. Ferromagnetic resonance study of Fe superparamagnetic nanoclusters on GaAs(100)[J]. Journal of Applied Physics, 2001, 89(11):7290-7292.
[9] Yang Jue, He Xuhong, Zhao Haotong, et al. Mathematica application guide[M]. Beijing: People’s Post Telegraph and Telephone Press, 1999.1-291.(in Chinese)
[10] Liu Yuangao, Liu Yaoru. Mathematica 4.0 utility course[M]. Beijing: National Defense Industry Press, 2000. 225-254.(in Chinese)
[11] Jorzick J, Krämer C, Demokritov S O, et al. Spin wave quantization in laterally confined magnetic structures(invited)[J]. Journal of Applied Physics, 2001, 89(11):7091-7095.

Memo

Memo:
* The project supported by the National Natural Science Foundation of China(50171020).
** Born in 1978, female, graduate.
Last Update: 2002-06-20