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[1] Wu Songchang, Feng Jun, Zhang Li, Li Wei, et al. A 10 Gb/s laser diode driver in 0.35 μm SiGe BiCMOS technology [J]. Journal of Southeast University (English Edition), 2009, 25 (3): 309-312. [doi:10.3969/j.issn.1003-7985.2009.03.005]
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A 10 Gb/s laser diode driver in 0.35 μm SiGe BiCMOS technology()
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Journal of Southeast University (English Edition)[ISSN:1003-7985/CN:32-1325/N]

Volumn:
25
Issue:
2009 3
Page:
309-312
Research Field:
Electronic Science and Engineering
Publishing date:
2009-09-30

Info

Title:
A 10 Gb/s laser diode driver in 0.35 μm SiGe BiCMOS technology
Author(s):
Wu Songchang Feng Jun Zhang Li Li Wei
Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China
Keywords:
laser diode driver MOS-HBT cascode SiGe BiCMOS technology
PACS:
TN722
DOI:
10.3969/j.issn.1003-7985.2009.03.005
Abstract:
This paper discusses the design of a 10 Gb/s laser diode driver implemented in SiGe BiCMOS technology.The laser diode driver is composed of an input buffer, a predriver circuit and an output current switch stage.With the current mode logic(CML)structure, the input buffer and the predriver circuit have the capability of transmission and amplification of high speed data.By employing MOS-HBT cascode structure as the output stage, the laser diode driver exhibits very high speed and efficiency working at the 10 Gb/s data rate.The core circuit is operated under a 3.3 V supply, while the output stage is operated under 5.5 V for sufficient headroom across the laser diode.The chip occupies a die area of 600 μm×800 μm.Measurements on chip show clear electrical eye diagrams over 10 Gb/s, which can well meet the specifications defined by SDH STM64/SONET OC192 and a 10 Gb/s Ethernet eye mask.Under a 5.5 V supply voltage, the maximum output swing is 3.0 V with a 50 Ω load(the corresponding modulation current is 60 mA), and the total power dissipation is 660 mW.

References:

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Memo

Memo:
Biographies: Wu Songchang(1983—), male, graduate;Feng Jun(corresponding author), female, doctor, professor, fengjun-seu@seu.edu.cn.
Foundation item: The National High Technology Research and Development Program of China(863 Program)(No.2006AA01Z284).
Citation: Wu Songchang, Feng Jun, Zhang Li, et al.A 10 Gb/s laser diode driver in 0.35 μm SiGe BiCMOS technology[J].Journal of Southeast University(English Edition), 2009, 25(3):309-312.
Last Update: 2009-09-20