|Table of Contents|

[1] Wang Qijun, Yan Aibin,. A novel double-node-upset-resilient radiation-hardened latch [J]. Journal of Southeast University (English Edition), 2018, 34 (2): 182-186. [doi:10.3969/j.issn.1003-7985.2018.02.006]

A novel double-node-upset-resilient radiation-hardened latch()

Journal of Southeast University (English Edition)[ISSN:1003-7985/CN:32-1325/N]

2018 2
Research Field:
Circuit and System
Publishing date:


A novel double-node-upset-resilient radiation-hardened latch
Wang Qijun Yan Aibin
School of Computer Science and Technology, Anhui University, Hefei 230601, China
radiation hardening circuit reliability soft error double-node upset single-node upset
To effectively tolerate a double-node upset, a novel double-node-upset-resilient radiation-hardened latch is proposed in 22 nm complementary-metal-oxide-semiconductor technology. Using three interlocked single-node-upset-resilient cells, which are identically mainly constructed from three mutually feeding back 2-input C-elements, the latch achieves double-node-upset-resilience. Using smaller transistor sizes, clock-gating technology, and high-speed transmission-path, the cost of the latch is effectively reduced. Simulation results demonstrate the double-node-upset-resilience of the latch and also show that compared with the up-to-date double-node-upset-resilient latches, the proposed latch reduces the transmission delay by 72.54%, the power dissipation by 33.97%, and the delay-power-area product by 78.57%, while the average cost of the silicon area is only increased by 16.45%.


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Biographies: Wang Qijun(1983—), male, doctor, senior engineer, 59974156@qq.com; Yan Aibin(1983—), male, doctor, lecturer, abyan@mail.ustc.edu.cn.
Foundation items: The National Natural Science Foundation of China(No.61604001), the Doctor Startup Fund of Anhui University(No.J01003217).
Citation: Wang Qijun, Yan Aibin. A novel double-node-upset-resilient radiation-hardened latch[J].Journal of Southeast University(English Edition), 2018, 34(2):182-186.DOI:10.3969/j.issn.1003-7985.2018.02.006.
Last Update: 2018-06-20