[1] Xu Yong, Wang Zhigong, Li Zhiqun, et al. Key technologies of frequency-hopping frequency synthesizerfor Bluetooth RF front-end [J]. Journal of Southeast University (English Edition), 2005, 21 (3): 260-262. [doi:10.3969/j.issn.1003-7985.2005.03.003]

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Key technologies of frequency-hopping frequency synthesizerfor Bluetooth RF front-end()

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Journal of Southeast University (English Edition)[ISSN:1003-7985/CN:32-1325/N]

Volumn:

21

Issue:

2005 3

Page:

260-262

Research Field:

Circuit and System

Publishing date:

2005-09-30

Info

Title:

Key technologies of frequency-hopping frequency synthesizerfor Bluetooth RF front-end

Author(s):

Xu Yong¹;  2;  Wang Zhigong¹;  Li Zhiqun¹;  Zhang Li¹;  Min Rui²;  Xu Guanghui¹;  3

¹Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China
²Institute of Sciences, PLA University of Science and Technology, Nanjing 211101, China
³Institute of Communication Engineering, PLA University of Science and Technology, Nanjing 210007, China

Keywords:

Bluetooth;  frequency hopping;  frequency synthesizer;  voltage controlled oscillator(VCO);  dual-modulus prescaler;  programmable divider

PACS:

TN431

DOI:

10.3969/j.issn.1003-7985.2005.03.003

Abstract:

A scheme of a frequency-hopping frequency-synthesizer applied to a Bluetooth ratio frequency(RF)front-end is presented, and design of a voltage controlled oscillator(VCO)and dual-modulus prescaler are focused on.It is fabricated in a 0.18 μm mixed-signal CMOS(complementary metal-oxide-semiconductor transistor)process.The power dissipation of VCO is low and a stable performance is gained.The measured phase noise of VCO at 2.4 GHz is less than -114.32 dBc/Hz.The structure of the DMP is optimized and a novel D-latch integrated with “OR” logic gate is used.The measured results show that the chip can work well under a 1.8 V power supply.The power dissipation of the core part in a dual modulus prescaler is only 5.76 mW.An RMS jitter of 2 ps is measured on the output signal at 118.3 MHz.It is less than 0.02% of the clock period.

References:

[1] Georgescu Bogdan A, Nakaska Joshua K, Randall Robert G, et al.A 0.18 μm CMOS Bluetooth frequency synthesizer for integration with a Bluetooth SOC reference platform [A].In:Proceedings of the 3rd IEEE International Workshop on SOC for Real-Time Applications [C].Calgary, Alberta, Canada, 2003.258-263.
[2] Filiol Norm, Birkett Neil, Cherry James.A 22 mW Bluetooth RF transceiver with direct RF modulation and on-chip IF filtering [A].In:ISSCC 2001[C].San Francisco, 2001.203-205.
[3] Theil D, Durdodt C, Heinen S, et al.A fully integrated CMOS frequency synthesizer for Bluetooth[A].In:IEEE Radio Frequency Integrated Circuits Symposium [C]. Phoenix Civic Plaza, 2001.103-106.
[4] Tiebout M.Low-power low-phase-noise differentially tuned quadrature VCO design in a standard CMOS [J]. IEEE Journal of Solid-State Circuits, 2001, 36(7):1018-1024.
[5] Niknejad A M, Meyer R G.Analysis, design, and optimization of spiral inductors and transformers for Si RFIC’s [J].IEEE Journal of Solid-State Circuits, 1998, 33(10):1470-1481.
[6] Huang Chih-Ming, Floyd B A, Park N, et al.Fully integrated 5.35 GHz CMOS VCOs and prescalers [J].IEEE Transactions on Microwave Theory and Techniques, 2001, 49(1):17-22.
[7] Ajjikuttira A B, Wei Liat Chan, Yong Lian.A 5.5 GHz prescaler in 0.18 μm CMOS technology [A].In:Proceedings of the IEEE Asia-Pacific Conference on ASIC [C].Singapore, 2002.69-72.
[8] Yang Ching-Yuan, Dehng Guang-Kaai, Hsv June-Ming, et al.New dynamic dlip-dlips for high-speed dual-modulus prescaler [J].IEEE Journal of Solid-State Circuits, 1998, 33(10):1568-1571.
[9] Chi Baoyong, Shi Bingxue.A novel CMOS dual modulus prescaler based on new optimized structure and dynamic circuit technique [J].Chinese Journal of Semiconductors, 2002, 23(4):357-359.

Memo

Memo:

Biographies: Xu Yong(1974—), male, graduate;Wang Zhigong(corresponding author), male, doctor, professor, zgwang@seu.edu.cn.

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