[1] Sun Weifeng, Sun Zhilin, Yi Yangbo, Lu Shengli, et al. Gate breakdown of high-voltage P-LDMOS and improved methods [J]. Journal of Southeast University (English Edition), 2006, 22 (1): 35-38. [doi:10.3969/j.issn.1003-7985.2006.01.008]

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Gate breakdown of high-voltage P-LDMOS and improved methods()

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Journal of Southeast University (English Edition)[ISSN:1003-7985/CN:32-1325/N]

Volumn:

22

Issue:

2006 1

Page:

35-38

Research Field:

Electronic Science and Engineering

Publishing date:

2006-03-20

Info

Title:

Gate breakdown of high-voltage P-LDMOS and improved methods

Author(s):

Sun Weifeng;  Sun Zhilin;  Yi Yangbo;  Lu Shengli;  Shi Longxing

National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China

Keywords:

peak electrical field;  hot-carrier effect;  reliability

PACS:

TN710;TN432

DOI:

10.3969/j.issn.1003-7985.2006.01.008

Abstract:

The failure experiments of the P-LDMOS(lateral double diffused metal oxide semiconductor)demonstrate that the high peak electrical fields in the channel region of high-voltage P-LDMOS will reinforce the hot-carrier effect, which can greatly reduce the reliability of the P-LDMOS.The electrical field distribution and two field peaks along the channel surface are proposed by Tsuprem-4 and Medici.The reason of resulting in the two electrical field peaks is also discussed.Two ways of reducing the two field peaks, which are to increase the channel length and to reduce the channel concentration, are also presented.The experimental results show that the methods presented can effectively improve the gate breakdown voltage and greatly improve the reliability of the P-LDMOS.

References:

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[3] Sun Weifeng, Wu Jianhui, Yi Yangbo, et al. High-voltage power integrated circuit technology using bulk-silicon for plasma display panels data driver IC [J].Microelectronic Engineering, 2004, 71(1):112-118.
[4] Kim Jongdae, Tae Moon Roh, Kim S-G, et al.High-voltage power integrated circuit technology using SOI for driving plasma display pannels [J].IEEE Transactions on Electron Devices, 2001, 48(6):1256-1263.
[5] Blochl Peter E, Stathis James H.Aspect of defects in silica related to dielectric breakdown of gate oxide in MOSFETs [J].Physica B, 1999, 273-274:1022-1026.
[6] Manzini S, Gllerano A.Avalanche injection of hot holes in the gate oxide of LDMOS transistors [J].Solid-State Electronics, 2000, 44(7):1325-1330.
[7] Wong H, Poon M C.Study of MOS gate dielectric breakdown due to drain avalanche breakdown [J].Microelectronics Reliability, 1998, 38(3):1433-1438.
[8] Appels J A, Vaes H M L.High voltage thin layer devices(RESURF devices)[C]//IEEE IEDM Tech Digest.Washington, DC, 1979: 238-241.

Memo

Memo:

Biographies: Sun Weifeng(1977—), male, graduate;Shi Longxing(corresponding author), male, doctor, professor, lxshi@seu.edu.cn.

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