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[1] Wang Jue, Li Wenyuan, Wang Zhigong, et al. Function electrical stimulation circuitfor neural signal regeneration system [J]. Journal of Southeast University (English Edition), 2007, 23 (4): 512-515. [doi:10.3969/j.issn.1003-7985.2007.04.007]
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Function electrical stimulation circuitfor neural signal regeneration system()
用于神经信号再生的神经功能电压驱动电路
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Journal of Southeast University (English Edition)[ISSN:1003-7985/CN:32-1325/N]

Volumn:
23
Issue:
2007 4
Page:
512-515
Research Field:
Circuit and System
Publishing date:
2007-12-30

Info

Title:
Function electrical stimulation circuitfor neural signal regeneration system
用于神经信号再生的神经功能电压驱动电路
Author(s):
Wang Jue1;  2;  Li Wenyuan1;  Wang Zhigong1
1Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China
2College of Integrated Circuits, Southeast University, Nanjing 210096, China
王珏1;  2;  李文渊1;  王志功1
1东南大学射频与光电集成电路研究所, 南京210096; 2东南大学集成电路学院, 南京210096
Keywords:
low-power;  rail-to-rail;  neural signal;  voltage drive
低功耗;  满摆幅;  神经信号;  电压驱动
PACS:
TN432
DOI:
10.3969/j.issn.1003-7985.2007.04.007
Abstract:
A low-power, high-gain circuit for function electrical stimulation(FES)is designed for the microelectronic neural signal regeneration system based on CSMC(CSMC Technologies Corporation)0.6 μm CMOS(complementary metal-oxide-semiconductor transistor)technology.It can be used to stimulate microelectrodes connected with the nerve bundles to regenerate neural signals.This circuit consists of two stages:a full differential folded-cascode amplifier input stage and a complementary class-AB output stage with an overload protection circuit.The rail-to-rail input and output stages are used to ensure a wide range of input and output voltages.The simulation results show that the gain of the circuit is 81 dB;the 3 dB-bandwidth is 295 kHz.The chip occupies a die area of 1.06 mm×0.52 mm.The on-wafer measurement results show that under a single supply voltage of+5 V, the DC power consumption is about 7.5 mW and the output voltage amplitude is 4.8 V.The chip can also run well under single supply voltage of +3.3 V.
采用华润上华0.6 μm CMOS工艺, 设计实现了一种用于神经信号再生微电子系统的低功耗、高增益功能电激励电压驱动电路.它可以用于驱动激励电极和与之相连的神经来再生神经信号.电路由2部分组成:全差分折叠式共源共栅放大器及带过载保护的互补型甲乙类输出级.电路采用了满摆幅的输入输出结构, 保证了大输入电压范围和大输出电压范围.仿真结果表明, 电路增益可以达到81 dB, 具有295 kHz 的3 dB带宽.芯片面积为1.06 mm×0.52 mm.经流片实现后在片测试, 在单电源+5 V下工作, 直流功耗约为7.5 mW, 输出电压幅度达到4.8 V;同时在单电源+3.3 V下也可正常工作.

References:

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Memo

Memo:
Biographies: Wang Jue(1983—), female, graduate;Li Wenyuan(corresponding author), male, doctor, associate professor, lwy555@seu.edu.cn.
Last Update: 2007-12-20