[1] Wu Rui, Liao Xiaoping, Zhang Zhiqiang, Yang Le, et al. Analysis of substrate eddy effects and distribution effectsin silicon-based inductor model [J]. Journal of Southeast University (English Edition), 2009, 25 (1): 57-62. [doi:10.3969/j.issn.1003-7985.2009.01.013]
Copy
Analysis of substrate eddy effects and distribution effectsin silicon-based inductor model(
)
硅基电感模型中衬底涡流效应和分布效应分析
)Journal of Southeast University (English Edition)[ISSN:1003-7985/CN:32-1325/N]
- Volumn:
- 25
- Issue:
- 2009 1
- Page:
- 57-62
- Research Field:
- Circuit and System
- Publishing date:
- 2009-03-30
Info
- Title:
- Analysis of substrate eddy effects and distribution effectsin silicon-based inductor model
- 硅基电感模型中衬底涡流效应和分布效应分析
- Author(s):
- Wu Rui; Liao Xiaoping; Zhang Zhiqiang; Yang Le
- Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China
- Keywords:
- planar spiral inductors; substrate eddy effects; distribution effects; equivalent circuit model
- PACS:
- TN405
- DOI:
- 10.3969/j.issn.1003-7985.2009.01.013
- Abstract:
- The concepts of substrate eddy influence factor and distribution-effects-occurring frequency are presented.The effects of substrate resistivity and inductor spiral length on the substrate eddy and distribution effects are captured.The substrate eddy influence factors of an inductor(6 turn, 3 060 μm in length)fabricated on low(1 Ω·cm)and high resistivity(1 000 Ω·cm)silicon substrates are 0.3 and 0.04, and the distribution-effects-occurring frequencies are 1.8 GHz and 14.5 GHz, respectively.The measurement results show that the equivalent circuit model of the inductor on low resistivity silicon must take into consideration substrate eddy effects and distribution effects.However, the circuit model of the inductor on high resistivity silicon cannot take into account the substrate eddy effects and the distribution effects at the frequencies of interest. Its simple model shows agreement with the measurements, and the contrast is within 7%.
- 提出了衬底涡流影响因子和分布效应发生频率的概念, 该概念能够准确地反映衬底涡流效应和分布效应与衬底电阻率、电感线圈长度等参数的关系.一个制作在低阻硅和高阻硅衬底上的6圈, 线圈长度为3 060 μm的电感, 其衬底涡流影响因子分别为0.3和0.04, 分布效应发生频率分别为1.5 GHz和14.5 GHz.实验表明, 低阻硅上该电感的等效电路模型必须包含衬底涡流效应和分布效应;而高阻硅上该电感的等效电路模型可以不包含衬底涡流效应和分布效应(测试范围为0.1~12 GHz), 其简化等效电路模型仍具有较高的精度, 误差在7%之内.
References:
[1] Lakdawala Hasnain, Zhu Xu, Luo Hao, et al.Micromachined high-Q inductors in a 0.18 μm copper interconnect low-k dielectric CMOS process [J].IEEE Journal of Solid-State Circuits, 2002, 37(3):394-403.
[2] Burghartz J N, Edelstein D C, Jenkins K A, et al.Monolithic spiral inductors fabricated using a VLSI Cu-damascene interconnect technology and low-loss substrates [C]//Technical Digest: International Electron Devices Meeting.San Francisco, CA, USA, 1996:99-102.
[3] Huo X, Chan Philip C H, Chen Kevin J, et al.A physical model for on-chip spiral inductors with accurate substrate modeling [J].IEEE Transactions on Electron Devices, 2006, 53(12):2942-2949.
[4] Gao Wei, Yu Zhiping.Scalable compact circuit model and synthesis for RF CMOS spiral inductors [J].IEEE Transactions on Microwave Theory and Technique, 2006, 54(3):1055-1064.
[5] Rotella Francis M, Blaschke Volker, Howard David.A broad-band scalable lumped-element inductor model using analytic expressions to incorporate skin effect, substrate loss, and proximity effect [C]//Technical Digest:International Electron Devices Meeting.San Francisco, CA, USA, 2002:471-474.
[6] Kuhn William B, Yanduru Naveen K.Spiral inductor substrate loss modeling in silicon RFICs [J].Microwave Journal, 1999, 42(3):66-81.
[7] Yue C Patrick, Wong S Simon.Physical modeling of spiral inductors on silicon [J].IEEE Transactions on Electron Devices, 2000, 47(3):560-568.
[8] Kim S, Neikirk D P.Compact equivalent circuit model for the skin effect [C]//IEEE MTT-S International Microwave Symposium Digest.San Francisco, CA, USA, 1996, 3:1815-1818.
[9] Cao Yu, Groves Robert A, Huang Xuejue, et al.Frequency-independent equivalent-circuit model for on-chip spiral inductors [J].IEEE Journal of Solid-State Circuits, 2003, 38(3):419-426.
[10] Niknejad Ali M, Meyer Robert G.Analysis, design, and optimization of spiral inductors and transformers for Si RF IC’s [J].IEEE Journal of Solid-State Circuits, 1998, 33(10):1470-1481.
[11] Koutsoyannopoulos Yorgos K, Papananos Yannis.Systematic analysis and modeling of integrated inductors and transformers in RF IC design [J].IEEE Transactions on Circuits and Systems Ⅱ:Analog and Digital Signal Processing, 2000, 47(8):699-713.
Memo
- Memo:
-
Biographies: Wu Rui(1986—), male, graduate; Liao Xiaoping(corresponding author), male, doctor, professor, xpliao@seu.edu.cn.
Foundation items: The National Natural Science Foundation of China(No.60676043), the National High Technology Research and Development Program of China(863 Program)(No.2007AA04Z328).
Citation: Wu Rui, Liao Xiaoping, Zhang Zhiqiang, et al.Analysis of substrate eddy effects and distribution effects in silicon-based inductor model[J].Journal of Southeast University(English Edition), 2009, 25(1):57-62.