[1] Wu Songchang, Feng Jun, Zhang Li, Li Wei, et al. A 10 Gb/s laser diode driver in 0.35 μm SiGe BiCMOS technology [J]. Journal of Southeast University (English Edition), 2009, 25 (3): 309-312. [doi:10.3969/j.issn.1003-7985.2009.03.005]
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A 10 Gb/s laser diode driver in 0.35 μm SiGe BiCMOS technology(
)
0.35 μm SiGe BiCMOS 10 Gb/s 激光驱动芯片设计
)Journal of Southeast University (English Edition)[ISSN:1003-7985/CN:32-1325/N]
- Volumn:
- 25
- Issue:
- 2009 3
- Page:
- 309-312
- Research Field:
- Electronic Science and Engineering
- Publishing date:
- 2009-09-30
Info
- Title:
- A 10 Gb/s laser diode driver in 0.35 μm SiGe BiCMOS technology
- 0.35 μm SiGe BiCMOS 10 Gb/s 激光驱动芯片设计
- Author(s):
- Wu Songchang; Feng Jun; Zhang Li; Li Wei
- Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China
- Keywords:
- laser diode driver; MOS-HBT cascode; SiGe BiCMOS technology
- PACS:
- TN722
- DOI:
- 10.3969/j.issn.1003-7985.2009.03.005
- Abstract:
- This paper discusses the design of a 10 Gb/s laser diode driver implemented in SiGe BiCMOS technology.The laser diode driver is composed of an input buffer, a predriver circuit and an output current switch stage.With the current mode logic(CML)structure, the input buffer and the predriver circuit have the capability of transmission and amplification of high speed data.By employing MOS-HBT cascode structure as the output stage, the laser diode driver exhibits very high speed and efficiency working at the 10 Gb/s data rate.The core circuit is operated under a 3.3 V supply, while the output stage is operated under 5.5 V for sufficient headroom across the laser diode.The chip occupies a die area of 600 μm×800 μm.Measurements on chip show clear electrical eye diagrams over 10 Gb/s, which can well meet the specifications defined by SDH STM64/SONET OC192 and a 10 Gb/s Ethernet eye mask.Under a 5.5 V supply voltage, the maximum output swing is 3.0 V with a 50 Ω load(the corresponding modulation current is 60 mA), and the total power dissipation is 660 mW.
- 讨论一款基于SiGe BiCMOS工艺工作速率为10 Gb/s 激光驱动芯片的设计.该激光驱动芯片包括输入缓冲、驱动放大电路和输出级电路3个部分.输入缓冲、驱动放大电路采用电流模电路, 满足高速数据传输和放大的能力, 输出级电路结构采用新型的MOS-HBT共源共栅结构可以降低米勒效应减小输入电容, 从而使激光驱动芯片工作在10 Gb/s时也能达到良好的性能.主电路电源电压为3.3 V, 输出级电路供电电压为5.5 V, 确保激光器有足够的电压摆幅.芯片总面积(包括焊盘)为600 μm×800 μm, , 测试表明当输入10 Gb/s的非归零随机码, 输出级电源电压为5.5 V时, 电路总功耗为660 mW, 在50 Ω负载上可以提供3 V的驱动电压(相应的驱动电流为60 mA).测试眼图清晰, 可以很好地满足SDH STM64/SONNET OC192和10 Gb/s 以太网的模板要求.
References:
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Memo
- Memo:
-
Biographies: Wu Songchang(1983—), male, graduate;Feng Jun(corresponding author), female, doctor, professor, fengjun-seu@seu.edu.cn.
Foundation item: The National High Technology Research and Development Program of China(863 Program)(No.2006AA01Z284).
Citation: Wu Songchang, Feng Jun, Zhang Li, et al.A 10 Gb/s laser diode driver in 0.35 μm SiGe BiCMOS technology[J].Journal of Southeast University(English Edition), 2009, 25(3):309-312.