[1] Liu Siyang, Qian Qinsong, Sun Weifeng,. Analysis of hot-carrier degradation in N-LDMOS transistorwith step gate oxide [J]. Journal of Southeast University (English Edition), 2010, 26 (1): 17-20. [doi:10.3969/j.issn.1003-7985.2010.01004]
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Analysis of hot-carrier degradation in N-LDMOS transistorwith step gate oxide(
)
带阶梯栅氧的N-LDMOS晶体管热载流子退化分析
)Journal of Southeast University (English Edition)[ISSN:1003-7985/CN:32-1325/N]
- Volumn:
- 26
- Issue:
- 2010 1
- Page:
- 17-20
- Research Field:
- Electronic Science and Engineering
- Publishing date:
- 2010-03-30
Info
- Title:
- Analysis of hot-carrier degradation in N-LDMOS transistorwith step gate oxide
- 带阶梯栅氧的N-LDMOS晶体管热载流子退化分析
- Author(s):
- Liu Siyang; Qian Qinsong; Sun Weifeng
- National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China
- PACS:
- TN386
- DOI:
- 10.3969/j.issn.1003-7985.2010.01004
- Abstract:
- In order to minimize the hot-carrier effect(HCE)and maintain on-state performance in the high voltage N-type lateral double diffused MOS(N-LDMOS), an optimized device structure with step gate oxide is proposed. Compared with the conventional configuration, the electric field under the gate along the Si-SiO2 interface in the presented N-LDMOS can be greatly reduced, which favors reducing the hot-carrier degradation. The step gate oxide can be achieved by double gate oxide growth, which is commonly used in some smart power ICs. The differences in hot-carrier degradations between the novel structure and the conventional structure are investigated and analyzed by 2D technology computer-aided design(TCAD)numerical simulations, and the optimal length of the thick gate oxide part in the novel N-LDMOS device can also be acquired on the basis of maintaining the characteristic parameters of the conventional device. Finally, the practical degradation measurements of some characteristic parameters can also be carried out. It is found that the hot-carrier degradation of the novel N-LDMOS device can be improved greatly.
- 为了减小高压N-LDMOS器件的热载流子效应并维持其开态特性, 提出了一种带有阶梯栅氧的新型N-LDMOS器件结构. 与传统的N-LDMOS器件相比, 其栅极下方Si-SiO2界面处的电场强度明显减弱, 因而可以有效地减少器件的热载流子效应, 而该阶梯栅氧结构可以通过功率集成电路工艺中普遍采用的栅氧生长方法进行2次栅氧生长来获得. 采用 TCAD仿真技术对传统的N-LDMOS器件和所提出的新型N-LDMOS器件的热载流子退化现象进行了对比和分析, 并在维持原有器件特性参数的基础上得出了新型N-LDMOS器件中厚栅氧部分的最优长度. 最后, 通过选取某些特性参数进行了实际的器件退化测试, 结果表明该新型N-LDMOS器件的热载流子退化现象得到了很大的改善.
References:
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[6] Chen J F, Tian K S, Chen S Y, et al. Gate current dependent hot-carrier-induced degradation in LDMOS transistors[J]. IEEE Electron Device Letters, 2008, 44(16): 991-992.
[7] Su R-Y, Chiang P Y, Gong Jeng, et al. Investigation on the initial hot-carrier injection in P-LDMOS transistors with shallow trench isolation structure[J]. IEEE Transactions on Electron Devices, 2008, 55(12): 3569-3573.
[8] Cortes I, Fernández-Martínez P, Flores D, et al. Static and dynamic electrical performances of STI thin-SOI power LDMOS transistors[J]. Semiconductor Science and Technology, 2008, 23(9): 493-498.
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Memo
- Memo:
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Biographies: Liu Siyang(1987—), male, graduate; Sun Weifeng(corresponding author), male, professor, swffrog@seu.edu.cn.
Foundation items: The Natural Science Foundation of Jiangsu Province(No.BK2008287), the Preresearch Project of the National Natural Science Foundation of Southeast University(No.XJ2008312).
Citation: Liu Siyang, Qian Qinsong, Sun Weifeng. Analysis of hot-carrier degradation in N-LDMOS transistor with step gate oxide[J]. Journal of Southeast University(English Edition), 2010, 26(1): 17-20.