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[1] Huang Jiwei, Wang Zhigong, Liao Yinghao, et al. A monolithic InGaP/GaAs HBT power amplifierfor W-CDMA applications [J]. Journal of Southeast University (English Edition), 2011, 27 (2): 132-135. [doi:10.3969/j.issn.1003-7985.2011.02.003]
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A monolithic InGaP/GaAs HBT power amplifierfor W-CDMA applications()
一种应用于W-CDMA的单片InGaP/GaAs HBT 功率放大器
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Journal of Southeast University (English Edition)[ISSN:1003-7985/CN:32-1325/N]

Volumn:
27
Issue:
2011 2
Page:
132-135
Research Field:
Circuit and System
Publishing date:
2011-06-30

Info

Title:
A monolithic InGaP/GaAs HBT power amplifierfor W-CDMA applications
一种应用于W-CDMA的单片InGaP/GaAs HBT 功率放大器
Author(s):
Huang Jiwei1, 2, Wang Zhigong1, Liao Yinghao2, Chen Zhijian2, Fang Zhijian2
1Institute of RF- & OE IC, Southeast University, Nanjing 210096, China
2 Guangzhou Runxin Information Technology Company, Guangzhou 510663, China
黄继伟1, 2, 王志功1, 廖英豪2, 陈志坚2, 方志坚2
1东南大学射频与光电集成电路研究所, 南京 210096; 2广州润芯信息技术有限公司, 广州 510663
Keywords:
power amplifier;  wide-band code division multiple access(W-CDMA);  heterojunction bipolar transistor(HBT);  bias circuit;  gain compression
功率放大器;  宽带码分多址;  异质结双极型晶体管;  偏置电路;  增益压缩
PACS:
TN431
DOI:
10.3969/j.issn.1003-7985.2011.02.003
Abstract:
A monolithic microwave integrated circuit(MMIC)power amplifier(PA)is proposed. It adopts a new on-chip bias circuit, which not only avoids the instability of the direct current bias caused by the change in the power supply and temperature, but also compensates deviations caused by the increase in input power. The bias circuit is a current-mirror configuration, and the feedback circuit helps to maintain bias voltage at a constant level. The gain of the feedback circuit is improved by the addition of a non-inverting amplifier within the feedback circuit. A shunt capacitor at the base node of the active bias transistor enhances the linearity of the PA. The chip is fabricated in an InGaP/GaAs heterojunction bipolar transistor(HBT)process. Measured results exhibit a 26.6-dBm output compression point, 33.6% power-added efficiency(PAE)and -40.2 dBc adjacent channel power ratio(ACPR)for wide-band code division multiple access(W-CDMA)applications.
设计了一款微波单片集成电路功率放大器.该放大器采用了一种新颖的在片偏置电路技术, 不仅避免了由于电源和温度变化导致的直流偏置点的不稳定, 而且补偿了由于输入信号增大所引起的交流偏置点的偏离.电流镜结构的偏置电路与反馈电路使偏置电压维持在一个稳定的状态, 在反馈电路中引入一个非反相电路提高了电路增益.通过在偏置管的基极并联一个电容进一步改善了功率放大器的线性.该芯片采用InGaP/GaAs HBT工艺制作.测试结果表明:该放大器具有26.6dBm的输出压缩点, 对于W-CDMA应用, 放大器的效率为33.6%, ACPR为-40.2 dBc.

References:

[1] Noh Y S, Park C S. An intelligent power amplifier MMIC using a new adaptive bias control circuit for W-CDMA applications [J]. IEEE Journal of Solid-State Circuits, 2004, 39(6): 967-970.
[2] Noh Y S, Park C S. PCS/W-CDMA dual-band MMIC power amplifier with a newly proposed linearizing bias circuit [J]. IEEE Journal of Solid-State Circuits, 2002, 37(9): 1096-1099.
[3] Kim J H, Kim J H, Noh Y S, et al. An InGaP-GaAs HBT MMIC smart power amplifier for W-CDMA mobile handsets [J]. IEEE Journal of Solid-State Circuits, 2003, 38(6): 905-910.
[4] Kim J H, Noh Y S, Park C S. A low quiescent current 3.3V operation linear MMIC power amplifier for 5 GHz WLAN applications [C]//IEEE MTT-S International Microwave Symposium Digest. Philadelphia, PA, USA, 2003:867-870.
[5] Kim J H, Noh Y S, Park C S. High linear HBT MMIC power amplifier with partial RF coupling to bias circuit for W-CDMA portable application [C]//Proceedings of the 3rd International Conference on Microwave and Millimeter Wave Technology. Beijing, China, 2002: 809-812.
[6] Aoki Y, Kunihiro K, Miyazaki T, et al. A 20-mA quiescent current two-stage W-CDMA power amplifier using anti-phase intermodulation distortion [C]//IEEE Radio Frequency Integrated Circuits Symposium. Fort Worth, TX, USA, 2004:357-360.
[7] Dening D C. Linear power amplifier bias circuit: US, 6333677 B1[P]. 2001-12-25.
[8] Liwinski H Z. Bias circuit for use with low-voltage power supply: US, 6515546 B2[P]. 2003-02-04.
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Memo

Memo:
Biographies: Huang Jiwei(1976—), male, doctor, seuhjw@seu.edu.cn;Wang Zhigong(1954—), male, professor, zgwang@seu.edu.cn.
Foundation item: The National High Technology Research and Development Program of China(863 Program)(No.2009AA01Z260).
Citation: Huang Jiwei, Wang Zhigong, Liao Yinghao, et al.A monolithic InGaP/GaAs HBT power amplifier for W-CDMA applications[J].Journal of Southeast University(English Edition), 2011, 27(2):132-135.[doi:10.3969/j.issn.1003-7985.2011.02.003]
Last Update: 2011-06-20