[1] Huang Jiwei, Wang Zhigong, Liao Yinghao, et al. A monolithic InGaP/GaAs HBT power amplifierfor W-CDMA applications [J]. Journal of Southeast University (English Edition), 2011, 27 (2): 132-135. [doi:10.3969/j.issn.1003-7985.2011.02.003]

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A monolithic InGaP/GaAs HBT power amplifierfor W-CDMA applications()

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Journal of Southeast University (English Edition)[ISSN:1003-7985/CN:32-1325/N]

Volumn:

27

Issue:

2011 2

Page:

132-135

Research Field:

Circuit and System

Publishing date:

2011-06-30

Info

Title:

A monolithic InGaP/GaAs HBT power amplifierfor W-CDMA applications

Author(s):

Huang Jiwei¹;  2;  Wang Zhigong¹;  Liao Yinghao²;  Chen Zhijian²;  Fang Zhijian²

¹Institute of RF- & OE IC, Southeast University, Nanjing 210096, China
² Guangzhou Runxin Information Technology Company, Guangzhou 510663, China

Keywords:

power amplifier;  wide-band code division multiple access(W-CDMA);  heterojunction bipolar transistor(HBT);  bias circuit;  gain compression

PACS:

TN431

DOI:

10.3969/j.issn.1003-7985.2011.02.003

Abstract:

A monolithic microwave integrated circuit(MMIC)power amplifier(PA)is proposed. It adopts a new on-chip bias circuit, which not only avoids the instability of the direct current bias caused by the change in the power supply and temperature, but also compensates deviations caused by the increase in input power. The bias circuit is a current-mirror configuration, and the feedback circuit helps to maintain bias voltage at a constant level. The gain of the feedback circuit is improved by the addition of a non-inverting amplifier within the feedback circuit. A shunt capacitor at the base node of the active bias transistor enhances the linearity of the PA. The chip is fabricated in an InGaP/GaAs heterojunction bipolar transistor(HBT)process. Measured results exhibit a 26.6-dBm output compression point, 33.6% power-added efficiency(PAE)and -40.2 dBc adjacent channel power ratio(ACPR)for wide-band code division multiple access(W-CDMA)applications.

References:

[1] Noh Y S, Park C S. An intelligent power amplifier MMIC using a new adaptive bias control circuit for W-CDMA applications [J]. IEEE Journal of Solid-State Circuits, 2004, 39(6): 967-970.
[2] Noh Y S, Park C S. PCS/W-CDMA dual-band MMIC power amplifier with a newly proposed linearizing bias circuit [J]. IEEE Journal of Solid-State Circuits, 2002, 37(9): 1096-1099.
[3] Kim J H, Kim J H, Noh Y S, et al. An InGaP-GaAs HBT MMIC smart power amplifier for W-CDMA mobile handsets [J]. IEEE Journal of Solid-State Circuits, 2003, 38(6): 905-910.
[4] Kim J H, Noh Y S, Park C S. A low quiescent current 3.3V operation linear MMIC power amplifier for 5 GHz WLAN applications [C]//IEEE MTT-S International Microwave Symposium Digest. Philadelphia, PA, USA, 2003:867-870.
[5] Kim J H, Noh Y S, Park C S. High linear HBT MMIC power amplifier with partial RF coupling to bias circuit for W-CDMA portable application [C]//Proceedings of the 3rd International Conference on Microwave and Millimeter Wave Technology. Beijing, China, 2002: 809-812.
[6] Aoki Y, Kunihiro K, Miyazaki T, et al. A 20-mA quiescent current two-stage W-CDMA power amplifier using anti-phase intermodulation distortion [C]//IEEE Radio Frequency Integrated Circuits Symposium. Fort Worth, TX, USA, 2004:357-360.
[7] Dening D C. Linear power amplifier bias circuit: US, 6333677 B1[P]. 2001-12-25.
[8] Liwinski H Z. Bias circuit for use with low-voltage power supply: US, 6515546 B2[P]. 2003-02-04.
[9] Dening D C, Jorgenson J D. Bias network for high efficiency RF linear power amplifier: US, 6369657 B2 [P]. 2002-04-09.
[10] WIN Semiconductors Corp. Design of HBT for power amplifier application[R]. Taipei, China: WIN Semiconductors Corp, 2004.

Memo

Memo:

Biographies: Huang Jiwei(1976—), male, doctor, seuhjw@seu.edu.cn;Wang Zhigong(1954—), male, professor, zgwang@seu.edu.cn.
Foundation item: The National High Technology Research and Development Program of China(863 Program)(No.2009AA01Z260).
Citation: Huang Jiwei, Wang Zhigong, Liao Yinghao, et al.A monolithic InGaP/GaAs HBT power amplifier for W-CDMA applications[J].Journal of Southeast University(English Edition), 2011, 27(2):132-135.[doi:10.3969/j.issn.1003-7985.2011.02.003]

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