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[1] Wang Yong, Wei Wei, Yang Dong, et al. 3D heterogeneous integration of wideband RF chipsusing silicon-based adapter board technology [J]. Journal of Southeast University (English Edition), 2021, 37 (1): 8-13. [doi:10.3969/j.issn.1003-7985.2021.01.002]
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3D heterogeneous integration of wideband RF chipsusing silicon-based adapter board technology()
基于硅转接板工艺的宽带射频芯片三维异构集成
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Journal of Southeast University (English Edition)[ISSN:1003-7985/CN:32-1325/N]

Volumn:
37
Issue:
2021 1
Page:
8-13
Research Field:
Electronic Science and Engineering
Publishing date:
2021-03-20

Info

Title:
3D heterogeneous integration of wideband RF chipsusing silicon-based adapter board technology
基于硅转接板工艺的宽带射频芯片三维异构集成
Author(s):
Wang Yong1;  2;  Wei Wei2;  Yang Dong3;  Sun Biao2Zhang Xingwen2;  Zhang Youming4;  5;  Huang Fengyi4;  5
1School of Information Science and Engineering, Southeast University, Nanjing 210096, China
2Yangzhou Marine Electronic Instrument Institute, Yangzhou 225001, China
3Hebei Semiconductor Research Institute, Shijiazhuang 050002, China
4School of Cyber Science and Engineering, Southeast University, Nanjing 210096, China
5 Purple Mountain Laboratories, Nanjing 211111, China
王勇1;  2;  韦炜2;  杨栋3;  孙彪2;  张兴稳2;  张有明4;  5;  黄风义4;  5
1 东南大学信息科学与工程学院, 南京 210096; 2 扬州船用电子仪器研究所, 扬州 225001; 3 河北半导体研究所, 石家庄 050002; 4 东南大学网络空间安全学院, 南京 210096; 5 紫金山实验室, 南京 211111
Keywords:
silicon-based adapter board;  frequency mixing;  frequency multiplier;  multi-function chip
硅基转接板;  混频;  倍频;  多功能芯片
PACS:
TN389
DOI:
10.3969/j.issn.1003-7985.2021.01.002
Abstract:
An ultra-wideband mixing component cascaded by a mixing multi-function chip and a frequency multiplier multi-function chip was demonstrated and implemented using 3D heterogeneous integration based on the silicon adapter board technology. Four layers of high-resistance silicon substrate stack packaging are implemented based on the wafer-level gold-gold bonding process. Each layer adopts though silicon via(TSV)technology to realize signal interconnection. A core monolithic integrated microwave chip(MMIC)is embedded in the silicon cavity, and the silicon-based filter is integrated with the high-resistance silicon substrate. The interconnect line, cavity and filter of the silicon-based adapter board are designed with AutoCAD, and HFSS is adopted for 3D electromagnetic field simulation. According to the measured results, the radio frequency(RF)of the mixing multi-function chip is 40-44 GHz and its intermediate frequency(IF)can cover the Ku band with a chip size of 10 mm×11 mm×1 mm. The multiplier multi-function chip operates at 16-20 GHz. The fundamental suppression is greater than 50 dB and the second harmonic suppression is better than 40 dB with a chip size of 8 mm×8 mm×1 mm. The cascaded fully assembled mixing component achieves a spur of better than -50 dBc and a gain of better than 15 dB.
基于硅转接板工艺实现了超宽带混频微系统组件的三维异构集成, 该混频组件由混频多功能芯片和倍频多功能芯片级联而成.基于晶圆级金-金键合工艺实现了四层高阻硅基板堆叠封装.每一层均采用硅通孔(TSV)技术, 从而实现信号之间的互连.单片集成微波芯片(MMIC)嵌入在硅腔内, 硅基滤波器集成在高阻硅衬底上.硅基转接板上的互连线、腔体以及滤波器采用AutoCAD进行设计, 并采用HFSS进行三维电磁场仿真.根据测试结果, 混频多功能芯片的射频频率为40~44 GHz, 中频频率可覆盖Ku频段, 尺寸为10 mm×11 mm×1 mm.倍频多功能芯片工作在16~20 GHz频段, 对基波信号的抑制优于50 dB, 对二次谐波信号的抑制优于40 dB, 尺寸为8 mm×8 mm×1 mm.级联后完全组装的混频组件可实现优于-50 dBc的杂散抑制比和优于15 dB的增益.

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Memo

Memo:
Biographies: Wang Yong(1983—), male, Ph.D. candidate; Zhang Youming(corresponding author), male, doctor, associate research fellow, zhangyouming@seu.edu.cn.
Citation: Wang Yong, Wei Wei, Yang Dong, et al. 3D heterogeneous integration of wideband RF chips using silicon-based adapter board technology[J].Journal of Southeast University(English Edition), 2021, 37(1):8-13.DOI:10.3969/j.issn.1003-7985.2021.01.002.
Last Update: 2021-03-20