|Table of Contents|

[1] Pu Yuqian, Shen Hongchang, Tang Feihong, et al. Design of millimeter-wave reflective attenuatorswith capacitive compensation technique [J]. Journal of Southeast University (English Edition), 2023, 39 (2): 153-160. [doi:10.3969/j.issn.1003-7985.2023.02.006]
Copy

Design of millimeter-wave reflective attenuatorswith capacitive compensation technique()
基于电容补偿技术的毫米波反射式衰减器设计
Share：

Journal of Southeast University (English Edition)[ISSN:1003-7985/CN:32-1325/N]

Volumn:
39
Issue:
2023 2
Page:
153-160
Research Field:
Circuit and System
Publishing date:
2023-06-20

Info

Title:
Design of millimeter-wave reflective attenuatorswith capacitive compensation technique
基于电容补偿技术的毫米波反射式衰减器设计
Author(s):
Pu Yuqian1, 2 , Shen Hongchang1, 2, Tang Feihong2, Hao Zhangwei2, Zhang Youming1, Huang Fengyi1
1School of Cyber Science and Engineering, Southeast University, Nanjing 210096, China
2Nanjing Guobo Electronics Co., Ltd., Nanjing 211153, China
浦鈺钤1, 2, 沈宏昌1, 2, 汤飞鸿2, 郝张伟2, 张有明1, 黄风义1
1东南大学网络空间安全学院, 南京 210096; 2南京国博电子股份有限公司, 南京 211153
Keywords:
reflective attenuators;  millimeter-wave;  capacitive compensation;  low attenuation error;  low phase variation
反射式衰减器;  毫米波;  容性补偿;  低衰减误差;  低相位变动
PACS:
TN454
DOI:
10.3969/j.issn.1003-7985.2023.02.006
Abstract:
To improve the attenuation accuracy and phase variation performance, two 5-bit millimeter-wave reflective attenuators with a capacitive compensation technique in gallium arsenide(GaAs)pseudomorphic high-electron-mobility transistor(PHEMT)process are presented. The parasitic effect of a millimeter-wave switch can be absorbed effectively in the design of the reflection load with capacitive compensation. Thus, attenuation and phase accuracy can be improved. Three basic capacitive compensation topologies were presented, and based on the analysis of the reflection coefficient on the Smith chart, the corresponding attenuation and phase variation were given. Furthermore, the design flow and optimization method of the reflective attenuator based on the capacitive compensation technique were summarized. Both chips are integrated with a 5-bit attenuator and a single-pole double-throw(SPDT)switch, and the chip size is 3 mm × 1 mm. Chip A with tail capacitance compensation was fabricated by a 0.5 μm GaAs PHEMT process, and Chip B with the compensation of the shunt capacitors before and after the switch was fabricated by a 0.15 μm GaAs PHEMT process. For both chips, the insertion loss(IL)with the SPDT switch is less than 4.5 dB, the IL of the 5-bit attenuator is less than 3 dB, the root-mean-square attenuation error is less than 0.4 dB, and the input 1 dB gain compression power is greater than 25 dBm. The phase variations of Chips A and B are less than ±5°and ±2.5°, respectively.
为提升衰减精度和附加相移性能, 采用电容补偿技术吸收了开关管的寄生效应, 设计了2款5位毫米波反射式衰减器芯片.通过剖析3种基本电容补偿拓扑, 借助史密斯圆图, 分析负载反射系数、衰减量和附加相移随补偿电容的变化情况, 总结出采用电容补偿技术设计反射式衰减器的设计流程和优化方法, 并流片验证.2款芯片均集成有1个五位衰减器和1个单刀双掷开关, 总芯片面积均为3 mm×1 mm.其中芯片A基于0.5 μm砷化镓PHEMT工艺, 采用了尾电容补偿技术;芯片B基于0.15 μm砷化镓PHEMT工艺, 采用了开关管前/后电容补偿技术.结果表明, 2款芯片包含开关的插入损耗均小于4.5 dB, 其中衰减器的插入损耗均小于3 dB, 衰减均方根误差都小于0.4 dB, 输入1 dB压缩功率都大于25 dBm, 芯片A衰减相位变动小于±5°, 芯片B衰减相位变动小于±2.5°.

References:

[1] Song I, Cho M K, Cressler J D. Design and analysis of a low loss, wideband digital step attenuator with minimized amplitude and phase variations[J]. IEEE Journal of Solid-State Circuits, 2018, 53(8): 2202-2213. DOI: 10.1109/JSSC.2018.2827934.
[2] Zhao C X, Guo J W, Liu H H, et al. A 33-41-GHz SiGe-BiCMOS digital step attenuator with minimized unit impedance variation[J]. IEEE Transactions on Very Large Scale Integration(VLSI)Systems, 2021, 29(3): 568-579. DOI: 10.1109/TVLSI.2020.3046016.
[3] Gu P, Zhao D X, You X H. A DC-50 GHz CMOS switched-type attenuator with capacitive compensation technique[J].IEEE Transactions on Circuits and Systems Ⅰ: Regular Papers, 2020, 67(10): 3389-3399. DOI: 10.1109/TCSI.2020.2999094.
[4] Zhao C X, Zeng X, Zhang L, et al. A 37-40-GHz low-phase-imbalance CMOS attenuator with tail-capacitor compensation technique[J].IEEE Transactions on Circuits and Systems Ⅰ: Regular Papers, 2020, 67(10): 3400-3409. DOI: 10.1109/TCSI.2020.2990705.
[5] Bulja S, Grebennikov A. Variable reflection-type attenuators based on varactor diodes[J]. IEEE Transactions on Microwave Theory and Techniques, 2012, 60(12): 3719-3727. DOI: 10.1109/TMTT.2012.2216895.
[6] Min B W, Rebeiz G M. A 10-50-GHz CMOS distributed step attenuator with low loss and low phase imbalance[J]. IEEE Journal of Solid-State Circuits, 2007, 42(11): 2547-2554. DOI: 10.1109/JSSC.2007.907205.
[7] Bae J, Lee J, Nguyen C. A 10-67-GHz CMOS dual-function switching attenuator with improved flatness and large attenuation range[J].IEEE Transactions on Microwave Theory and Techniques, 2013, 61(12): 4118-4129. DOI: 10.1109/TMTT.2013.2288694.
[8] Rao S G, Cheon C D, Cressler J D. A millimeter-wave, transformer-based, SiGe distributed attenuator[J]. IEEE Microwave and Wireless Components Letters, 2022, 32(2): 145-148. DOI: 10.1109/LMWC.2021.3118291.
[9] Jeong J C, Yom I B, Kim J D, et al. A 6-18-GHz GaAs multifunction chip with 8-bit true time delay and 7-bit amplitude control[J]. IEEE Transactions on Microwave Theory and Techniques, 2018, 66(5): 2220-2230. DOI: 10.1109/TMTT.2017.2786698.
[10] Jeong J C, Uhm M, Jang D P, et al. A ka-band GaAs multi-function chip with wide-band 6-bit phase shifters and attenuators for satellite applications[C]//2019 13th European Conference on Antennas and Propagation(EuCAP). Krakow, Poland, 2019: 1-4.
[11] Zhao L. Investigations on RF transceivers and related integrated circuits for a new generation broadband wireless internet[D]. Nanjing: Southeast University, 2018.(in Chinese)
[12] Ben Yishay R, Elad D. W-band SiGe attenuators based on compact low-VSWR topologies[C]//2017 IEEE MTT-S International Microwave Symposium(IMS). Honololu, HI, USA, 2017: 638-641. DOI: 10.1109/MWSYM.2017.8058650.
[13] Bulja S, Rulikowski P. High dynamic range reflection-type attenuator[C]//2018 IEEE Radio and Antenna Days of the Indian Ocean(RADIO). Wolmar, Mauritius, 2018: 1-2.
[14] Chen N. A millimeter-wave 6-bit GaAs monolithic digital attenuator with low insertion phase shift[C]//2013 International Workshop on Microwave and Millimeter Wave Circuits and System Technology. Chengdu, China, 2014: 440-443. DOI: 10.1109/MMWCST.2013.6814545.
[15] Zhao J, Zhang B, Yang X F. A 25-30 GHz 6-bit digital attenuator with high accuracy and low insertion loss[C]//2016 IEEE MTT-S International Wireless Symposium(IWS). Shanghai, China, 2016: 1-3. DOI: 10.1109/IEEE-IWS.2016.7585420.
[16] Wang K P, Zhou T X, Zhang H, et al. A 28-40-GHz digital step attenuator with low amplitude and phase variations[J]. IEEE Microwave and Wireless Components Letters, 2021, 31(1): 64-67. DOI: 10.1109/LMWC.2020.3039914.
[17] Zhao L, Liang W F, Xu X J, et al. An integrated Q-band 6-bit digital attenuator with low insertion loss[C]//2014 Asia-Pacific Microwave Conference. Sendai, Japan, 2015: 1196-1198.

Memo

Memo:
Biographies: Pu Yuqian(1989—), male, Ph.D. candidate; Zhang Youming(corresponding author), male, doctor, associate professor, zhangyouming@seu.edu.cn.
Citation: Pu Yuqian, Shen Hongchang, Tang Feihong, et al. Design of millimeter-wave reflective attenuators with capacitive compensation technique[J].Journal of Southeast University(English Edition), 2023, 39(2):153-160.DOI:10.3969/j.issn.1003-7985.2023.02.006.
Last Update: 2023-06-20