|Table of Contents|

[1] Wang Yong, Wei Wei, Yang Dong, et al. 3D heterogeneous integration of wideband RF chipsusing silicon-based adapter board technology [J]. Journal of Southeast University (English Edition), 2021, (1): 8-13. [doi:10.3969/j.issn.1003-7985.2021.01.002]

3D heterogeneous integration of wideband RF chipsusing silicon-based adapter board technology()

Journal of Southeast University (English Edition)[ISSN:1003-7985/CN:32-1325/N]

Research Field:
Electronic Science and Engineering
Publishing date:


3D heterogeneous integration of wideband RF chipsusing silicon-based adapter board technology
Wang Yong1 2 Wei Wei2 Yang Dong3 Sun Biao2Zhang Xingwen2 Zhang Youming4 5 Huang Fengyi4 5
1School of Information Science and Engineering, Southeast University, Nanjing 210096, China
2Yangzhou Marine Electronic Instrument Institute, Yangzhou 225001, China
3Hebei Semiconductor Research Institute, Shijiazhuang 050002, China
4School of Cyber Science and Engineering, Southeast University, Nanjing 210096, China
5 Purple Mountain Laboratories, Nanjing 211111, China
silicon-based adapter board frequency mixing frequency multiplier multi-function chip
An ultra-wideband mixing component cascaded by a mixing multi-function chip and a frequency multiplier multi-function chip was demonstrated and implemented using 3D heterogeneous integration based on the silicon adapter board technology. Four layers of high-resistance silicon substrate stack packaging are implemented based on the wafer-level gold-gold bonding process. Each layer adopts though silicon via(TSV)technology to realize signal interconnection. A core monolithic integrated microwave chip(MMIC)is embedded in the silicon cavity, and the silicon-based filter is integrated with the high-resistance silicon substrate. The interconnect line, cavity and filter of the silicon-based adapter board are designed with AutoCAD, and HFSS is adopted for 3D electromagnetic field simulation. According to the measured results, the radio frequency(RF)of the mixing multi-function chip is 40-44 GHz and its intermediate frequency(IF)can cover the Ku band with a chip size of 10 mm×11 mm×1 mm. The multiplier multi-function chip operates at 16-20 GHz. The fundamental suppression is greater than 50 dB and the second harmonic suppression is better than 40 dB with a chip size of 8 mm×8 mm×1 mm. The cascaded fully assembled mixing component achieves a spur of better than -50 dBc and a gain of better than 15 dB.


[1] Pares G, Jean-Philippe M, Edouard D, et al. Highly compact RF transceiver module using high resistive silicon interposer with embedded inductors and heterogeneous dies integration[C]//2019 IEEE 69th Electronic Components and Technology Conference(ECTC). Las Vegas, NV, USA, 2019: 1279-1286. DOI:10.1109/ECTC.2019.00198.
[2] Bouayadi O E, Dussopt L, Lamy Y, et al. Silicon interposer: A versatile platform towards full-3D integration of wireless systems at millimeter-wave frequencies[C]//2015 IEEE 65th Electronic Components and Technology Conference(ECTC). San Diego, CA, USA, 2015: 973-980. DOI:10.1109/ECTC.2015.7159713.
[3] Liang H M, Liu S, Xiong B. TSV-free vertical interconnection technology using Au-Si eutectic bonding for MEMS wafer-level packaging[C]//2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors ⅩⅩⅩⅢ. Berlin, Germany, 2019: 1666-1669. DOI:10.1109/TRANSDUCERS.2019.8808412.
[4] Zhang M, Yang J, He Y R, et al. Research on a 3D encapsulation technique for capacitive MEMS sensors based on through silicon via[J].Sensors, 2018, 19(1): E93. DOI:10.3390/s19010093.
[5] Li N N, Xing C Y. Development of inertial micro-system packaging and integration technology[J]. Navigation and Control, 2018, 17(6): 28-34. DOI:10.3969/j.issn.1674-5558.2018.06.005. (in Chinese)
[6] Sun L, Chen M H, Zhang L, et al. Recent progress in SLID bonding in novel 3D-IC technologies[J].Journal of Alloys and Compounds, 2020, 818: 152825. DOI:10.1016/j.jallcom.2019.152825.
[7] Wang Q, Liu Z, Jiang J, et al. A new cellular-based redundant TSV structure for clustered faults[J]. IEEE Transactions on Very Large Scale Integration Systems, 2019, 27(2): 458-467. DOI:10.1109/TVLSI.2018.2876906.
[8] Huang M, Zhu J, Shi G X. Silicon interposer combined with integrated passive devices for micro/millimeter wave application[J]. Equipment for Electronic Products Manufacturing, 2017, 46(4): 20-23.(in Chinese)
[9] Zhao Y Z, Wang S D. A novel 3D T/R module with MEMS technology[C]//2016 International Conference on Integrated Circuits and Microsystems(ICICM). Chengdu, China, 2016: 286-289. DOI:10.1109/ICAM.2016.7813609.
[10] Tummala R R. 3D system package architecture as alternative to 3D stacking of ICs with TSV at system level[C]//2017 IEEE International Electron Devices Meeting(IEDM). San Francisco, CA, USA, 2017: 3.4.1-3.4.3. DOI:10.1109/IEDM.2017.8268319.
[11] Liu J F, Wang B, Zhou Y, et al. Design and implementation of a dual-band RF SiP module based on package-on-package technology[C]//2018 International Conference on Microwave and Millimeter Wave Technology(ICMMT). Chengdu, China, 2018: 1-3. DOI:10.1109/ICMMT.2018.8563973.


Biographies: Wang Yong(1983—), male, Ph.D. candidate; Zhang Youming(corresponding author), male, doctor, associate research fellow, zhangyouming@seu.edu.cn.
Citation: Wang Yong, Wei Wei, Yang Dong, et al. 3D heterogeneous integration of wideband RF chips using silicon-based adapter board technology[J].Journal of Southeast University(English Edition), 2021, 37(1):8-13.DOI:10.3969/j.issn.1003-7985.2021.01.002.
Last Update: 2021-03-20