|Table of Contents|

[1] Huang Jiwei, Wang Zhigong,. RF MEMS switches based on thermal actuator [J]. Journal of Southeast University (English Edition), 2007, 23 (4): 520-523. [doi:10.3969/j.issn.1003-7985.2007.04.009]
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RF MEMS switches based on thermal actuator()
热驱动式RF MEMS开关设计
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Journal of Southeast University (English Edition)[ISSN:1003-7985/CN:32-1325/N]

Volumn:
23
Issue:
2007 4
Page:
520-523
Research Field:
Circuit and System
Publishing date:
2007-12-30

Info

Title:
RF MEMS switches based on thermal actuator
热驱动式RF MEMS开关设计
Author(s):
Huang Jiwei Wang Zhigong
Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China
黄继伟 王志功
东南大学射频与光电集成电路研究所, 南京 210096
Keywords:
RF MEMS(radio frequency micro-electro-mechanical systems) thermal actuator lateral contact isolation
射频微机电系统 热驱动器 横向接触 隔离
PACS:
TN402
DOI:
10.3969/j.issn.1003-7985.2007.04.009
Abstract:
A new switching circuit is presented for the application in the frequency range of 0 to 8 GHz.This switch is electro-thermally actuated and exhibits high radio frequency(RF)performance due to its lateral contact mechanism.It composes of electroplated nickel and silicon nitride as structural materials.The isolation between bias and signal ports is realized by using silicon nitride.In the case of a small deformation, the relation between the displacement of the vertex and the pre-bending angle is analyzed.The metal contact is realized by in-plane motion and sidewall connection.The switches were fabricated using the MetalMUMPs process from MEMSCAP.The RF testing results show that the switch has a low insertion loss of 0.9 dB at 8 GHz and a high isolation of 30 dB below 8 GHz.
设计了一种工作在0~8 GHz频段的热驱动式RF MEMS开关.开关利用热驱动方式实现横向金属直接接触, 因此具有较好的射频性能.开关的结构层由厚的电镀镍和氮化硅组成, 由于氮化硅的绝缘作用, 实现了射频信号与驱动信号的隔离, 有助于进一步提高射频性能.分析了在较小变形量的情况下, 突起角度与顶点位移量的关系.电镀的金壁作为接触金属降低了接触电阻.开关通过MetalMUMPs工艺进行成功流片, 测试结果显示, 开关在8 GHz有小于0.9 dB的插入损耗和大于30 dB的隔离度.

References:

[1] Larson L E, Hackett R H, Melendes M A, et al.Micromachined microwave actuator(MIMAC)technology—a new tuning approach for microwave integrated circuits [C]//IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium.Boston, MA, 1991:27-30.
[2] Que L, Park J-S, Gianchandani Y B, et al.Bent-beam electrothermal actuators—Part Ⅰ:single beam and cascaded devices [J].IEEE Microelectromechanical Systems, 2001, 10(2):247-262.
[3] Hyman D, Mehregany M.Contact physics of gold microcontacts for MEMS switches [J].IEEE Trans Components and Packaging Technology, 1999, 22(3):357-364.
[4] Girbau D, Lkaro A, Pradell L.RF MEMS switches based on the buckle-beam thermal actuator [C]//The 33rd European Microwave Conference.Munich, 2003:651-654.
[5] Wang Ye, Li Zhihong, McCormick D T, et al.Low-voltage lateral-contact microrelays for RF applications [C]//The Fifteenth IEEE International Conference on Micro Electro Mechanical Systems.Las Vegas, NV, USA, 2002:645-648.
[6] Kruglick E J J, Pister K S J.Lateral MEMS microcontact considerations [J].Journal of Microelectromechanical Systems, 1999, 8(3):264-271.
[7] Cowen Allen, Mahadevan Ramaswamy, Johnson Stafford, et al.MetalMUMPs’s design handbook.Revision 2.0.[R].MEMSCAP, 2002.
[8] Agrawal Vivek.A latching MEMS relay for DC and RF applications [C]//Proceedings of the 50th IEEE Holm Conference on Electrical Contacts.Seattle, WA, USA, 2004:222-225.

Memo

Memo:
Biographies: Huang Jiwei(1976—), male, graduate;Wang Zhigong(corresponding author), male, doctor, professor, zgwang@seu.edu.cn.
Last Update: 2007-12-20