[1] Wu Songchang, Feng Jun, Zhang Li, Li Wei, et al. A 10 Gb/s laser diode driver in 0.35 μm SiGe BiCMOS technology [J]. Journal of Southeast University (English Edition), 2009, 25 (3): 309-312. [doi:10.3969/j.issn.1003-7985.2009.03.005]
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A 10 Gb/s laser diode driver in 0.35 μm SiGe BiCMOS technology(
)
)Journal of Southeast University (English Edition)[ISSN:1003-7985/CN:32-1325/N]
- Volumn:
- 25
- Issue:
- 2009 3
- Page:
- 309-312
- Research Field:
- Electronic Science and Engineering
- Publishing date:
- 2009-09-30
Info
- Title:
- A 10 Gb/s laser diode driver in 0.35 μm SiGe BiCMOS technology
- Author(s):
- Wu Songchang; Feng Jun; Zhang Li; Li Wei
- Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China
- Keywords:
- laser diode driver; MOS-HBT cascode; SiGe BiCMOS technology
- PACS:
- TN722
- DOI:
- 10.3969/j.issn.1003-7985.2009.03.005
- Abstract:
- This paper discusses the design of a 10 Gb/s laser diode driver implemented in SiGe BiCMOS technology.The laser diode driver is composed of an input buffer, a predriver circuit and an output current switch stage.With the current mode logic(CML)structure, the input buffer and the predriver circuit have the capability of transmission and amplification of high speed data.By employing MOS-HBT cascode structure as the output stage, the laser diode driver exhibits very high speed and efficiency working at the 10 Gb/s data rate.The core circuit is operated under a 3.3 V supply, while the output stage is operated under 5.5 V for sufficient headroom across the laser diode.The chip occupies a die area of 600 μm×800 μm.Measurements on chip show clear electrical eye diagrams over 10 Gb/s, which can well meet the specifications defined by SDH STM64/SONET OC192 and a 10 Gb/s Ethernet eye mask.Under a 5.5 V supply voltage, the maximum output swing is 3.0 V with a 50 Ω load(the corresponding modulation current is 60 mA), and the total power dissipation is 660 mW.
References:
[1] Li Day-Uei, Tsai Chia-Ming.10-Gb/s modulator drivers with local feedback networks [J].IEEE Journal of Solid-State Circuits, 2006, 41(5):1025-1030.
[2] Wang Tengyi, Chen Weizen, Tsai Chia-Ming, et al.A 10-Gb/s laser diode driver in 0.35 μm BiCMOS technology [C]//IEEE VLSI-TSA International Symposium on VLSI Design, Automation and Test.Hsinchu, Taiwan, China, 2005:253-256.
[3] Wang Zhigong, Berroth Manfred, Nowotny Ulrich, et al.Integrated laser diode voltage driver for 20 Gb/s optical system using 0.3 μm gate length quantum well HEMTs [J].IEEE Journal of Solid-State Circuits, 1993, 28(7):829-834.
[4] Racanelli Maco, Kempf Paul.SiGe BiCMOS technology for RF circuit applications[J].IEEE Transactions on Electron Devices, 2005, 52(7):1259-1270.
[5] Dickson Timothy O, Beerkens Rudy, Voinigescu Sorin P.A 2.5-V 45-Gb/s decision circuit using SiGe BiCMOS logic [J].IEEE Journal of Solid-State Circuits, 2005, 40(4):994-1003.
[6] Gray Paul R, Hurst P, Lewis S, et al.Analysis and design of analog integrated circuit [M].4th ed.New York:Wiley, 2001.
[7] Dickson Timothy O, Yau Kenneth H K, Chalvatzis Theodoros, et al.The invariance of characteristic current densities in nanoscale MOSFETs and its impact on algorithmic design methodologies and design porting of Si(Ge)(Bi)CMOS high-speed building blocks[J].IEEE Journal of Solid-State Circuits, 2006, 41(8):1830-1845.
[8] Mangan A M.Millimeter-wave device characterization for nano-CMOS IC design [D].Toronto:Department of Electrical and Computer Engineering of University of Toronto, 2005.
[9] Li Day-Uei, Tsai Chia-Ming, Huang Li-Ren.Laser/modulator driver with high modulation output operating up to 14-Gb/s using 0.35 μm SiGe BiCMOS process[C]//The 2004 IEEE Asia-Pacific Conference on Circuits and Systems.Fukuoka, Japan, 2004:225-228.
Memo
- Memo:
-
Biographies: Wu Songchang(1983—), male, graduate;Feng Jun(corresponding author), female, doctor, professor, fengjun-seu@seu.edu.cn.
Foundation item: The National High Technology Research and Development Program of China(863 Program)(No.2006AA01Z284).
Citation: Wu Songchang, Feng Jun, Zhang Li, et al.A 10 Gb/s laser diode driver in 0.35 μm SiGe BiCMOS technology[J].Journal of Southeast University(English Edition), 2009, 25(3):309-312.