[1] Gu GaoweiZhu EnLin Ye,. Design of 10 Gbit/s burst-mode transimpedance preamplifierfor PON systems [J]. Journal of Southeast University (English Edition), 2012, 28 (4): 398-403. [doi:10.3969/j.issn.1003-7985.2012.04.005]

Copy

Design of 10 Gbit/s burst-mode transimpedance preamplifierfor PON systems()

10 Gbit/s PON系统突发模式前置放大器设计

Share：

Journal of Southeast University (English Edition)[ISSN:1003-7985/CN:32-1325/N]

Volumn:

28

Issue:

2012 4

Page:

398-403

Research Field:

Electronic Science and Engineering

Publishing date:

2012-12-30

Info

Title:

Design of 10 Gbit/s burst-mode transimpedance preamplifierfor PON systems

10 Gbit/s PON系统突发模式前置放大器设计

Author(s):

Gu GaoweiZhu EnLin Ye

Institute of RF and OE-ICs, Southeast University, Nanjing 210096, China

顾皋蔚;  朱恩;  林叶

东南大学射频与光电集成电路研究所, 南京210096

Keywords:

burst-mode;  passive optical network(PON);  transimpedance preamplifier;  regulated cascade(RGC);  peak detector;  auto-gain-control;  threshold extraction

突发模式;  无源光网络;  跨阻前置放大器;  调节型共源共栅;  峰值检测;  自动增益控制;  阈值提取

PACS:

TN722

DOI:

10.3969/j.issn.1003-7985.2012.04.005

Abstract:

A 10 Gbit/s burst-mode preamplifier is designed for passive optical networks(PONs). To achieve a high dynamic range and fast response, the circuit is DC coupled, and a feed-back type peak detector is designed to perform auto-gain-control and threshold extraction. Regulated cascade(RGC)architecture is exploited as the input stage to reduce the input impedance of the circuit and isolate the large parasitic capacitance including the photodiode capacitance from the determination pole, thus increasing the bandwidth. This preamplifier is implemented using the low-cost 0.13 μm CMOS technology. The die area is 425 μm×475 μm and the total power dissipation is 23.4 mW. The test results indicate that the preamplifier can work at a speed from 1.25 to 10.312 5 Gbit/s, providing a high transimpedance gain of 64.0 dBΩ and a low gain of 54.6 dBΩ with a dynamic input range of over 22.9 dB. The equivalent input noise current is 23.4 pA/Hz^1/2. The proposed burst amplifier satisfies related specifications defined in 10G-EPON and XG-PON standards.

针对无源光网络(PON)设计了10 Gbit/s的突发模式前置放大器.为了获取大动态范围和快速响应, 电路采用DC耦合结构, 并设计了一种反馈型峰值检测单元以实现自动增益控制与阈值提取功能.利用调节型共源共栅(RGC)结构的输入级单元减小了电路的输入电阻, 使得包括光检测器电容在内的大寄生电容与电路的主极点相隔离, 从而提高了带宽.该前置放大器采用低成本的0.13 μm CMOS工艺实现, 芯片面积为425 μm×475 μm, 总功耗为23.4 mW.测试结果表明, 电路的工作速率范围在1.25~10.312 5 Gbit/s, 可提供64.0 dBΩ的高跨阻增益与54.6 dBΩ的低跨阻增益, 输入动态范围大于22.9 dB.等效输入噪声电流为23.4 pA/Hz^1/2.该放大器可满足10G-EPON与XG-PON的相关指标.

References:

[1] IEEE 802.3av 10G-EPON Task Force. Carrier sense multiple access with collision detection(CSMA/CD)access method and physical layer specification, amendment 1: physical layer specifications and management parameters for 10 Gb/s passive optical networks [S]. New York: The Institute of Electrical and Electronics Engineers, Inc., 2009.
[2] ITU-T.G.987.2 10-gigabit-capable passive optical networks(XG-PON): physical media dependent(PMD)layer specification [S]. Geneva: Telecommunication Standardization Sector of International Telecommunication Union, 2010.
[3] Oh Y-H, Lee S-G, Le Q, et al. A burst-mode receiver for 1.25-Gb/s Ethernet PON with AGC and internally created reset signal [J]. IEEE Journal of Solid-State Circuits, 2004, 39(12): 2379-2388.
[4] Ko H-S, Han S, Lee M-S, et al. 1.25 Gb/s burst-mode optical receiver for the Ethernet PON using 0.35 μm CMOS technology [C]//The 6th International Conference on Advanced Communication Technology. Phoenix Park, South Korea, 2004: 2379-2388.
[5] Schneider K, Zimmermann H. Three-stage burst-mode transimpedance amplifier in deep-sub-μm CMOS technology [J]. IEEE Transactions on Circuits and Systems, 2006, 53(7): 1458-1467.
[6] Lee S-H, Kim J, Le Q, et al. A single-chip 2.5-Gb/s burst-mode optical receiver with wide dynamic range [J]. IEEE Photonics Technology Letters, 2011, 23(2): 85-87.
[7] Ridder T D, Ossieur P, Baekelandt B, et al. A 2.7 V 9.8 Gb/s burst-mode TIA with fast automatic gain locking and coarse threshold extraction [C]//IEEE International Solid-State Circuits Conference. San Francisco, USA, 2008: 220-221.
[8] Park S M, Yoo H J. 1.25-Gb/s regulated cascode CMOS transimpedance amplifier for Gigabit Ethernet applications [J]. IEEE Journal of Solid-State Circuits, 2004, 39(1): 112-121.
[9] Chen W-Z, Gan R-M. 1.8V, variable gain transimpedance amplifiers with constant damping factor for burst-mode optical receiver[C]//Radio Frequency Integrated Circuits(RFIC)Symposium. Long Beach, CA, USA, 2005: 691-694.
[10] Raja K M, Yan D L, Yeoh W G. Burst mode receiver for GPON [C]//IEEE International Photonics Global Conference(IPGC). Singapore, 2008:1-4.
[11] Chen R Y, Chang M J. A CMOS variable-gain fully-differential transimpedance amplifier for multimedia data links [C]//International Conference on Intelligent Information Hiding and Multimedia Signal Processing. Kyoto, Japan, 2009: 402-405.

Memo

Memo:

Biographies: Gu Gaowei(1982—), female, graduate; Zhu En(corresponding author), male, doctor, professor, zhuenpro@seu.edu.cn.
Foundation item: The Key Technology Research and Development Program of Jiangsu Province(No.BE2008128).
Citation: Gu Gaowei, Zhu En, Lin Ye. Design of 10 Gbit/s burst-mode transimpedance preamplifier for PON systems.[J]. Journal of Southeast University(English Edition), 2012, 28(4):398-403.[doi:10.3969/j.issn.1003-7985.2012.04.005]

Common functions