[1] Huang Tingting, Liu Siyang, Sun Weifeng, Zhang Chunwei, et al. Novel lateral insulated gate bipolar transistor on SOI substratefor optimizing hot-carrier degradation [J]. Journal of Southeast University (English Edition), 2014, 30 (1): 17-21. [doi:10.3969/j.issn.1003-7985.2014.01.004]

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Novel lateral insulated gate bipolar transistor on SOI substratefor optimizing hot-carrier degradation()

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Journal of Southeast University (English Edition)[ISSN:1003-7985/CN:32-1325/N]

Volumn:

30

Issue:

2014 1

Page:

17-21

Research Field:

Circuit and System

Publishing date:

2014-03-31

Info

Title:

Novel lateral insulated gate bipolar transistor on SOI substratefor optimizing hot-carrier degradation

Author(s):

Huang Tingting;  Liu Siyang;  Sun Weifeng;  Zhang Chunwei

National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China

Keywords:

lateral insulated gate bipolar transistor(LIGBT);  silicon-on-insulator(SOI);  hot-carrier effect(HCE);  optimization

PACS:

TN432

DOI:

10.3969/j.issn.1003-7985.2014.01.004

Abstract:

A novel lateral insulated gate bipolar transistor on a silicon-on-insulator substrate(SOI-LIGBT)with a special low-doped P-well structure is proposed. The P-well structure is added to attach the P-body under the channel, so as to reduce the linear anode current degradation without additional process. The influence of the length and depth of the P-well on the hot-carrier(HC)reliability of the SOI-LIGBT is studied. With the increase in the length of the P-well, the perpendicular electric field peak and the impact ionization peak diminish, resulting in the reduction of the hot-carrier degradation. In addition, the impact ionization will be weakened with the increase in the depth of the P-well, which also makes the hot-carrier degradation decrease. Considering the effect of the low-doped P-well and the process windows, the length and depth of the P-well are both chosen as 2 μm.

References:

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Memo

Memo:

Biographies: Huang Tingting(1988—), female, graduate; Sun Weifeng(corresponding author), male, doctor, professor, swffrog@seu.edu.cn.
Foundation items: The National Natural Science Foundation of China(No.61204083), the Natural Science Foundation of Jiangsu Province(No.BK2011059), the Program for New Century Excellent Talents in University(No.NCET-10-0331).
Citation: Huang Tingting, Liu Siyang, Sun Weifeng, et al.Novel lateral insulated gate bipolar transistor on SOI substrate for optimizing hot-carrier degradation[J].Journal of Southeast University(English Edition), 2014, 30(1):17-21.[doi:10.3969/j.issn.1003-7985.2014.01.004]

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