[1] Liu Siyang, Qian Qinsong, Sun Weifeng,. Analysis of hot-carrier degradation in N-LDMOS transistorwith step gate oxide [J]. Journal of Southeast University (English Edition), 2010, 26 (1): 17-20. [doi:10.3969/j.issn.1003-7985.2010.01004]
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Analysis of hot-carrier degradation in N-LDMOS transistorwith step gate oxide(
)
)Journal of Southeast University (English Edition)[ISSN:1003-7985/CN:32-1325/N]
- Volumn:
- 26
- Issue:
- 2010 1
- Page:
- 17-20
- Research Field:
- Electronic Science and Engineering
- Publishing date:
- 2010-03-30
Info
- Title:
- Analysis of hot-carrier degradation in N-LDMOS transistorwith step gate oxide
- Author(s):
- Liu Siyang; Qian Qinsong; Sun Weifeng
- National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China
- PACS:
- TN386
- DOI:
- 10.3969/j.issn.1003-7985.2010.01004
- Abstract:
- In order to minimize the hot-carrier effect(HCE)and maintain on-state performance in the high voltage N-type lateral double diffused MOS(N-LDMOS), an optimized device structure with step gate oxide is proposed. Compared with the conventional configuration, the electric field under the gate along the Si-SiO2 interface in the presented N-LDMOS can be greatly reduced, which favors reducing the hot-carrier degradation. The step gate oxide can be achieved by double gate oxide growth, which is commonly used in some smart power ICs. The differences in hot-carrier degradations between the novel structure and the conventional structure are investigated and analyzed by 2D technology computer-aided design(TCAD)numerical simulations, and the optimal length of the thick gate oxide part in the novel N-LDMOS device can also be acquired on the basis of maintaining the characteristic parameters of the conventional device. Finally, the practical degradation measurements of some characteristic parameters can also be carried out. It is found that the hot-carrier degradation of the novel N-LDMOS device can be improved greatly.
References:
[1] Sun Weifeng, Wu Jianhui, Yi Yangbo, et al. High-voltage power integrated circuit technology using bulk-silicon for plasma display panels data driver IC[J]. Microelectron Eng, 2004, 71(1): 112-118.
[2] Whiston S, Bain D, Deignan A, et al. Complementary LDMOS transistors for a CMOS/BiCMOS process[C]//Proc IEEE Int Symp Power Semicond Devices ICs. Berlin, Germany, 2000: 51-54.
[3] Terashima T, Yamamoto F, Hatasako K. Multi-voltage device integration technique for 0.5 μm BiCMOS & DMOS process[C]//Proc IEEE Int Symp Power Semicond Devices ICs. Berlin, Germany, 2000: 331-334.
[4] Chen J F, Tian K S, Chen S Y, et al. On-resistance degradation induced by hot-carrier injection in LDMOS transistors with STI in the drift region[J]. IEEE Electron Device Letters, 2008, 29(9): 1071-1073.
[5] Vandooren A, Cristoloveanu S, Conley J F Jr, et al. A systematic investigation of the degradation mechanisms in SOI n-channel LD-MOSFETS[J]. Solid-State Electronics, 2003, 47(9): 1419-1427.
[6] Chen J F, Tian K S, Chen S Y, et al. Gate current dependent hot-carrier-induced degradation in LDMOS transistors[J]. IEEE Electron Device Letters, 2008, 44(16): 991-992.
[7] Su R-Y, Chiang P Y, Gong Jeng, et al. Investigation on the initial hot-carrier injection in P-LDMOS transistors with shallow trench isolation structure[J]. IEEE Transactions on Electron Devices, 2008, 55(12): 3569-3573.
[8] Cortes I, Fernández-Martínez P, Flores D, et al. Static and dynamic electrical performances of STI thin-SOI power LDMOS transistors[J]. Semiconductor Science and Technology, 2008, 23(9): 493-498.
[9] Yang Xiaodong, Tian Lilin, Chen Wensong. Novel measurement method for lateral distribution of interface state based on charge pumping technology[J]. Chinese Journal of Semiconductors, 1998, 19(11): 834-840.(in Chinese)
Memo
- Memo:
-
Biographies: Liu Siyang(1987—), male, graduate; Sun Weifeng(corresponding author), male, professor, swffrog@seu.edu.cn.
Foundation items: The Natural Science Foundation of Jiangsu Province(No.BK2008287), the Preresearch Project of the National Natural Science Foundation of Southeast University(No.XJ2008312).
Citation: Liu Siyang, Qian Qinsong, Sun Weifeng. Analysis of hot-carrier degradation in N-LDMOS transistor with step gate oxide[J]. Journal of Southeast University(English Edition), 2010, 26(1): 17-20.