[1] Liu Chao, Zhang Chunwei, Liu Siyang, Sun Weifeng, et al. SPICE model of trench-gate MOSFET device [J]. Journal of Southeast University (English Edition), 2016, 32 (4): 408-414. [doi:10.3969/j.issn.1003-7985.2016.04.003]

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Journal of Southeast University (English Edition)[ISSN:1003-7985/CN:32-1325/N]

Volumn:

32

Issue:

2016 4

Page:

408-414

Research Field:

Electronic Science and Engineering

Publishing date:

2016-12-20

Info

Title:

SPICE model of trench-gate MOSFET device

Author(s):

Liu Chao;  Zhang Chunwei;  Liu Siyang;  Sun Weifeng

National ASIC System Engineering Technology Research Center, Southeast University, Nanjing 210096, China

Keywords:

trench-gate metal-oxide-semiconductor field-effect transistor(MOSFET);  simulation program with integrated circuit emphasis(SPICE)model;  drift region resistance model;  dynamic model

PACS:

TN386

DOI:

10.3969/j.issn.1003-7985.2016.04.003

Abstract:

A novel simulation program with an integrated circuit emphasis(SPICE)model developed for trench-gate metal-oxide-semiconductor field-effect transistor(MOSFET)devices is proposed. The drift region resistance was modeled according to the physical characteristics and the specific structure of the trench-gate MOSFET device. For the accurate simulation of dynamic characteristics, three important capacitances, gate-to-drain capacitance C_gd, gate-to-source capacitance C_gs and drain-to-source capacitance C_ds, were modeled, respectively, in the proposed model. Furthermore, the self-heating effect, temperature effect and breakdown characteristic were taken into account; the self-heating model and breakdown model were built in the proposed model; and the temperature parameters of the model were revised. The proposed model is verified by experimental results, and the errors between measured data and simulation results of the novel model are less than 5%. Therefore, the model can give an accurate description for both the static and dynamic characteristics of the trench-gate MOSFET device.

References:

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Memo

Memo:

Biographies: Liu Chao(1993—), male, graduate; Sun Weifeng(corresponding author), male, doctor, professor, swffrog@seu.edu.cn.
Foundation items: The National Natural Science Foundation of China(No.61604038), China Postdoctoral Science Foundation(No.2015M580376), the Natural Science Foundation of Jiangsu Province(No.BK20160691), Jiangsu Postdoctoral Science Foundation(No.1501010A).
Citation: Liu Chao, Zhang Chunwei, Liu Siyang, et al. SPICE model of trench-gate MOSFET device[J].Journal of Southeast University(English Edition), 2016, 32(4):408-414.DOI:10.3969/j.issn.1003-7985.2016.04.003.

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